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MT46V8M16TG-6T:D TR

MT46V8M16TG-6T:D TR Description

The MT46V8M16TG-6T:D TR is a 128Mbit DRAM memory IC designed by Micron Technology Inc., a leading provider of advanced semiconductor solutions. This memory device is organized as 8M x 16, offering a robust and efficient memory solution for a variety of applications. The MT46V8M16TG-6T:D TR features a parallel memory interface, which ensures high-speed data transfer and compatibility with various systems. It operates within a supply voltage range of 2.3V to 2.7V and supports a clock frequency of 167 MHz, providing fast access times of 700 ps. The memory is volatile, meaning it requires a continuous power supply to retain data, and it is housed in a surface-mount package, specifically a 66TSOP format, making it suitable for compact and high-density designs. The device is REACH unaffected and is categorized under ECCN EAR99, with a HTSUS code of 8542.32.0002. Despite being marked as obsolete, the MT46V8M16TG-6T:D TR remains a reliable choice for applications requiring high-speed, high-density DRAM solutions.

MT46V8M16TG-6T:D TR Features

• High-Speed Performance: With a clock frequency of 167 MHz and an access time of 700 ps, the MT46V8M16TG-6T:D TR ensures rapid data retrieval and processing, making it ideal for applications requiring quick response times.
• Volatile Memory: As a DRAM device, it provides high-speed, temporary storage that is essential for applications needing frequent data updates and quick access.
• Wide Operating Voltage Range: The MT46V8M16TG-6T:D TR operates within a supply voltage range of 2.3V to 2.7V, offering flexibility in power supply design and compatibility with various systems.
• Parallel Memory Interface: The parallel interface allows for efficient data transfer, ensuring high throughput and compatibility with a wide range of systems.
• Surface-Mount Packaging: The 66TSOP package format is designed for surface-mount technology, enabling high-density and compact designs, which are crucial for modern electronics.
• Moisture Sensitivity Level (MSL) 2: This indicates a moderate level of sensitivity to moisture, ensuring reliability and longevity in typical industrial environments.
• Operating Temperature Range: The MT46V8M16TG-6T:D TR operates within an ambient temperature range of 0°C to 70°C, making it suitable for a variety of environmental conditions.
• Write Cycle Time: With a write cycle time of 15ns, the device ensures efficient data writing operations, enhancing overall system performance.

MT46V8M16TG-6T:D TR Applications

The MT46V8M16TG-6T:D TR is well-suited for applications that demand high-speed, high-density memory solutions. Some specific use cases include:

• Networking Equipment: Ideal for routers, switches, and other networking devices that require fast data processing and storage.
• Industrial Control Systems: Suitable for programmable logic controllers (PLCs) and other industrial systems that need reliable and efficient memory.
• Telecommunications: Used in base stations and other telecommunication equipment where high-speed data transfer is critical.
• Consumer Electronics: Applicable in gaming consoles, high-end multimedia devices, and other consumer electronics that require fast and efficient memory.
• Embedded Systems: Perfect for embedded systems in automotive, aerospace, and other industries where compact and high-performance memory is essential.

Conclusion of MT46V8M16TG-6T:D TR

The MT46V8M16TG-6T:D TR is a versatile and high-performance DRAM memory IC that offers significant advantages over similar models. Its fast access times, wide operating voltage range, and compact surface-mount packaging make it an ideal choice for a variety of applications, from networking equipment to consumer electronics. Despite being marked as obsolete, its reliability and performance ensure that it remains a valuable component in modern electronic systems. For designers and engineers seeking a robust and efficient memory solution, the MT46V8M16TG-6T:D TR is a reliable and high-performance option.