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MT47H128M4CB-3:B

MT47H128M4CB-3:B Description

The MT47H128M4CB-3:B is a high-performance DRAM memory IC chip designed by Micron Technology Inc., a leading provider of semiconductor solutions. This memory chip features a 512Mbit capacity organized as 128M x 4, offering robust performance for various applications. It operates within a supply voltage range of 1.7V to 1.9V and supports a clock frequency of 333 MHz. The chip is designed for parallel memory interface, ensuring efficient data transfer and processing. With an access time of 450 picoseconds and a write cycle time of 15 nanoseconds, the MT47H128M4CB-3:B ensures rapid data access and write operations, making it suitable for high-speed computing environments.

MT47H128M4CB-3:B Features

• Memory Type: Volatile DRAM, ensuring data retention during operation but requiring power to maintain data integrity.
• Memory Organization: 128M x 4, providing a total memory size of 512Mbit, ideal for applications requiring significant memory capacity.
• Clock Frequency: 333 MHz, enabling high-speed data processing and efficient operation.
• Access Time: 450 picoseconds, ensuring rapid data retrieval and minimizing latency.
• Write Cycle Time: 15 nanoseconds, facilitating quick write operations and enhancing overall system performance.
• Supply Voltage: 1.7V to 1.9V, ensuring compatibility with low-voltage systems and reducing power consumption.
• Operating Temperature: 0°C to 85°C, making it suitable for a wide range of environmental conditions.
• Package: 60FBGA, offering a compact and efficient surface-mount solution.
• Moisture Sensitivity Level (MSL): 5 (48 Hours), ensuring reliability in manufacturing processes.
• Compliance: REACH Unaffected and ROHS3 Compliant, meeting stringent environmental and safety standards.
• ECCN: EAR99, indicating compliance with export regulations.
• HTSUS: 8542.32.0024, ensuring proper classification for import and export purposes.

MT47H128M4CB-3:B Applications

The MT47H128M4CB-3:B is ideal for applications requiring high-speed, high-capacity memory solutions. Its robust performance and compact design make it suitable for:

• High-Performance Computing: Ideal for systems requiring rapid data processing and large memory capacity.
• Networking Equipment: Enhances the performance of routers, switches, and other networking devices by providing fast data access.
• Embedded Systems: Suitable for embedded applications where space is limited and high performance is required.
• Consumer Electronics: Enhances the performance of devices such as gaming consoles, smart TVs, and other multimedia devices.

Conclusion of MT47H128M4CB-3:B

The MT47H128M4CB-3:B is a versatile and high-performance DRAM memory IC chip that offers significant advantages over similar models. Its fast access and write times, combined with a high clock frequency and low supply voltage, make it an ideal choice for applications requiring high-speed data processing and large memory capacity. Despite being marked as obsolete, the MT47H128M4CB-3:B remains a reliable and efficient solution for various electronic systems. Its compliance with environmental and safety standards ensures its suitability for modern manufacturing processes. For applications requiring robust performance and efficient memory management, the MT47H128M4CB-3:B is a compelling choice.