Micron Technology_MT47H128M8HQ-3:E TR
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Micron Technology
MT47H128M8HQ-3:E TR

774-MT47H128M8HQ-3:E TR
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IC DRAM 1GBIT PARALLEL 60FBGA

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Tech Specifications

Clock Frequency
333 MHz
Memory Type
Volatile
Product Status
Obsolete
Supplier Device Package
60-FBGA (8x11.5)
Access Time
450 ps
Package / Case
60-FBGA
Technology
SDRAM - DDR2
Voltage - Supply
1.7V ~ 1.9V
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MT47H128M8HQ-3:E TR Description

MT47H128M8HQ-3:E TR Description

The MT47H128M8HQ-3:E TR is a high-performance DRAM memory IC designed by Micron Technology Inc., featuring a 1Gbit memory size organized as 128M x 8. This device operates with a parallel memory interface and is housed in a 60FBGA package, available in tape and reel (TR) format. The memory is volatile, meaning it requires a continuous power supply to retain data, with a supply voltage range of 1.7V to 1.9V. It supports a clock frequency of 333 MHz and offers an access time of 450 picoseconds, ensuring rapid data retrieval. The write cycle time for a word or page is 15 nanoseconds, enhancing overall system performance.

MT47H128M8HQ-3:E TR Features

  • Memory Organization: 128M x 8, providing a total memory size of 1Gbit.
  • Access Time: 450 picoseconds, ensuring extremely fast data access.
  • Write Cycle Time: 15 nanoseconds for word and page writes, optimizing write operations.
  • Clock Frequency: 333 MHz, supporting high-speed data processing.
  • Supply Voltage: 1.7V to 1.9V, ensuring compatibility with low-power systems.
  • Operating Temperature: 0°C to 85°C (TC), suitable for a wide range of environmental conditions.
  • Moisture Sensitivity Level (MSL): Level 3 (168 Hours), indicating robustness against moisture.
  • Compliance: REACH Unaffected and ROHS3 Compliant, ensuring environmental and regulatory standards.
  • Packaging: Tape & Reel (TR), facilitating efficient handling and assembly in manufacturing processes.

MT47H128M8HQ-3:E TR Applications

The MT47H128M8HQ-3:E TR is ideal for applications requiring high-speed, high-density memory solutions. Its fast access and write times make it suitable for:

  • Networking Equipment: Routers, switches, and other networking devices that require rapid data processing.
  • Telecommunications: Base stations and communication infrastructure that demand high-speed memory.
  • Embedded Systems: Industrial control systems, medical devices, and other embedded applications where fast memory access is crucial.
  • Consumer Electronics: High-performance gaming consoles, digital cameras, and other consumer devices that benefit from fast memory.

Conclusion of MT47H128M8HQ-3:E TR

The MT47H128M8HQ-3:E TR from Micron Technology Inc. is a powerful DRAM memory IC designed for high-speed, high-density memory needs. Its fast access and write times, combined with a robust operating temperature range and compliance with environmental standards, make it a versatile and reliable choice for a variety of applications. While the product is now obsolete, it remains a benchmark for performance and reliability in its category.

FAQ

What voltage specification is listed for MT47H128M8HQ-3:E TR?
The listed voltage-related specification for MT47H128M8HQ-3:E TR is 1.7V ~ 1.9V.
Is MT47H128M8HQ-3:E TR currently in stock?
What operating temperature range does MT47H128M8HQ-3:E TR support?
Are there related or alternative parts for MT47H128M8HQ-3:E TR?
What is the mounting type of MT47H128M8HQ-3:E TR?
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