Micron Technology_MT47H128M8SH-25E IT:M

Micron Technology
MT47H128M8SH-25E IT:M  
Memory ICs Products

Micron Technology
MT47H128M8SH-25E IT:M
774-MT47H128M8SH-25E IT:M
IC DRAM 1GBIT PARALLEL 60FBGA
In Stock : 1461

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MT47H128M8SH-25E IT:M Description

MT47H128M8SH-25E IT:M Description

The MT47H128M8SH-25E IT:M is a high-performance DRAM memory IC chip designed by Micron Technology Inc. This 1Gbit memory device is organized as 128M x 8, offering a robust solution for applications requiring significant data storage and fast access times. The chip operates with a clock frequency of 400 MHz and boasts an access time of 400 picoseconds, ensuring rapid data retrieval. It features a parallel memory interface, which is ideal for systems that require high-speed data transfer and efficient memory management.

The MT47H128M8SH-25E IT:M operates within a supply voltage range of 1.7V to 1.9V, making it suitable for low-power applications. It is available in a surface mount package, specifically in a 60FBGA form factor, which is compact and suitable for space-constrained designs. The chip is REACH unaffected and RoHS3 compliant, adhering to stringent environmental and safety standards. It also has a moisture sensitivity level (MSL) of 3, allowing for a 168-hour exposure before assembly.

MT47H128M8SH-25E IT:M Features

  • High-Speed Performance: With a clock frequency of 400 MHz and an access time of 400 picoseconds, the MT47H128M8SH-25E IT:M ensures rapid data processing and retrieval, making it ideal for high-speed computing applications.
  • Low-Power Operation: The chip operates within a voltage range of 1.7V to 1.9V, making it suitable for low-power applications and contributing to energy efficiency.
  • Volatile Memory: As a DRAM device, it provides volatile memory, which is essential for applications requiring fast read/write operations and temporary data storage.
  • Parallel Interface: The parallel memory interface facilitates high-speed data transfer, making it suitable for systems that require efficient memory management.
  • Compact Design: Available in a 60FBGA package, the chip is compact and suitable for space-constrained designs, ensuring flexibility in system integration.
  • Environmental Compliance: The MT47H128M8SH-25E IT:M is REACH unaffected and RoHS3 compliant, adhering to stringent environmental and safety standards, making it suitable for global markets.
  • Moisture Resistance: With an MSL of 3, the chip can withstand up to 168 hours of exposure before assembly, ensuring reliability in various manufacturing environments.

MT47H128M8SH-25E IT:M Applications

The MT47H128M8SH-25E IT:M is well-suited for a variety of applications that demand high-speed data processing and efficient memory management. Key applications include:

  • High-Performance Computing: Ideal for servers and high-performance computing systems where rapid data access and processing are critical.
  • Networking Equipment: Suitable for routers, switches, and other networking devices that require fast memory access to handle high-speed data traffic.
  • Telecommunications: Applicable in base stations and other telecommunication infrastructure where reliable and fast memory is essential.
  • Industrial Control Systems: Useful in industrial automation and control systems that require efficient data handling and low-power operation.
  • Consumer Electronics: Can be integrated into gaming consoles, high-end PCs, and other consumer electronics that demand high-speed memory for optimal performance.

Conclusion of MT47H128M8SH-25E IT:M

The MT47H128M8SH-25E IT:M is a versatile and high-performance DRAM memory IC chip that offers significant advantages over similar models. Its combination of high-speed performance, low-power operation, and compact design makes it an ideal choice for a wide range of applications, from high-performance computing to consumer electronics. The chip's compliance with environmental and safety standards ensures its suitability for global markets, while its moisture resistance guarantees reliability in various manufacturing environments. Overall, the MT47H128M8SH-25E IT:M is a reliable and efficient solution for applications requiring fast and efficient memory management.

Tech Specifications

Clock Frequency
PPAP
Data Bus Width (bit)
Operating Current (mA)
Number of Internal Banks
Memory Type
Product Status
Automotive
Supplier Package
DRAM Type
Chip Density (bit)
Number of Words per Bank
Package / Case
Technology
Voltage - Supply
REACH Status
Maximum Operating Supply Voltage (V)
Maximum Clock Rate (MHz)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Number of I/O Lines (bit)
Memory Interface
ECCN
Memory Organization
Supplier Temperature Grade
Mounting Type
Standard Package Name
Pin Count
Mounting
Memory Size
Lead Shape
Typical Operating Supply Voltage (V)
HTSUS
Package
Organization
PCB changed
HTS
ECCN (US)
Supplier Device Package
Address Bus Width (bit)
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Access Time
Process Technology
Package Height
Mfr
Maximum Access Time (ns)
Memory Format
Interface Type
RoHS Status
Number of Bits/Word (bit)
Package Length
Series
Write Cycle Time - Word, Page
Part Status
Package Width
Base Product Number
Minimum Operating Supply Voltage (V)
Mounting Style
Unit Weight
Data Bus Width
Supply Current - Max
RoHS
Supply Voltage - Min
Minimum Operating Temperature
Type
Moisture Sensitive
Maximum Clock Frequency
Maximum Operating Temperature
Supply Voltage - Max
USHTS

MT47H128M8SH-25E IT:M Documents

Download datasheets and manufacturer documentation for MT47H128M8SH-25E IT:M

Ersa MT47Hxx(x)M4/8/16      
Ersa Memory 24-May-2022       Tray 05-May-2022      
Ersa Micron FBGA and Component Marking Decoder      

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