Micron Technology
MT47H64M16NF-25E IT:M  
Memory ICs Products

Micron Technology
MT47H64M16NF-25E IT:M
774-MT47H64M16NF-25E IT:M
IC DRAM 1GBIT PARALLEL 84FBGA
In Stock : 3456

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MT47H64M16NF-25E IT:M Description

MT47H64M16NF-25E IT:M Description

The MT47H64M16NF-25E IT:M is a high-performance DRAM memory IC designed by Micron Technology Inc. This device offers a memory size of 1Gbit, organized as 64M x 16, making it suitable for applications requiring substantial memory capacity. The memory type is volatile, meaning it retains data only while power is supplied. The memory format is DRAM, which is known for its fast read and write capabilities, essential for dynamic data storage and retrieval.

This IC features a parallel memory interface, which allows for efficient data transfer and communication with other components in a system. The clock frequency is rated at 400 MHz, ensuring rapid processing and high throughput. The access time is an impressive 400 picoseconds, providing extremely fast data retrieval times, which is critical for high-speed applications.

The MT47H64M16NF-25E IT:M operates within a supply voltage range of 1.7V to 1.9V, making it energy-efficient and suitable for low-power systems. The write cycle time for word and page operations is 15 nanoseconds, further enhancing its performance in write-intensive applications.

The device is packaged in a surface-mount 84FBGA format, which is ideal for compact and high-density PCB designs. It is also compliant with RoHS3 standards, ensuring it meets environmental and safety regulations. The moisture sensitivity level (MSL) is rated at 3 (168 hours), making it suitable for various manufacturing environments.

MT47H64M16NF-25E IT:M Features

  • High-Speed Performance: With a clock frequency of 400 MHz and an access time of 400 picoseconds, the MT47H64M16NF-25E IT:M delivers rapid data processing capabilities.
  • Large Memory Capacity: The 1Gbit memory size, organized as 64M x 16, provides ample space for data storage, making it suitable for applications requiring significant memory resources.
  • Energy Efficiency: The supply voltage range of 1.7V to 1.9V ensures low power consumption, making it ideal for energy-conscious designs.
  • Fast Write Operations: The write cycle time of 15 nanoseconds allows for quick data updates and modifications, enhancing overall system performance.
  • Robust Packaging: The surface-mount 84FBGA package is compact and durable, suitable for high-density PCB layouts.
  • Environmental Compliance: RoHS3 compliance ensures the device meets stringent environmental and safety standards.
  • Moisture Resistance: An MSL rating of 3 (168 hours) makes the IC suitable for various manufacturing environments, reducing the risk of moisture-related damage.

MT47H64M16NF-25E IT:M Applications

The MT47H64M16NF-25E IT:M is ideal for a wide range of applications that require high-speed, high-capacity memory solutions. Some specific use cases include:

  • Networking Equipment: Routers, switches, and other networking devices benefit from the fast data retrieval and large memory capacity, ensuring efficient data handling and routing.
  • Telecommunications: Base stations and communication systems require reliable and high-speed memory to manage data traffic and ensure seamless communication.
  • Industrial Control Systems: PLCs and other industrial control systems can leverage the robust performance and capacity of this DRAM IC to manage complex processes and data-intensive tasks.
  • Consumer Electronics: High-performance gaming consoles and multimedia devices can utilize the fast access times and large memory size to deliver smooth and responsive user experiences.

Conclusion of MT47H64M16NF-25E IT:M

The MT47H64M16NF-25E IT:M is a versatile and high-performance DRAM memory IC that offers significant advantages over similar models. Its combination of high-speed performance, large memory capacity, energy efficiency, and robust packaging makes it an ideal choice for a variety of applications. Whether used in networking equipment, telecommunications, industrial control systems, or consumer electronics, this IC delivers reliable and efficient memory solutions. With its compliance to environmental and safety standards, the MT47H64M16NF-25E IT:M is a future-proof choice for modern electronic designs.

Tech Specifications

Clock Frequency
PPAP
Data Bus Width (bit)
Operating Current (mA)
Number of Internal Banks
Memory Type
Product Status
Automotive
Supplier Package
DRAM Type
Chip Density (bit)
Number of Words per Bank
Package / Case
Technology
Voltage - Supply
REACH Status
Maximum Operating Supply Voltage (V)
Maximum Clock Rate (MHz)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Number of I/O Lines (bit)
Memory Interface
ECCN
Memory Organization
Supplier Temperature Grade
Mounting Type
Standard Package Name
Pin Count
Mounting
Memory Size
Lead Shape
SVHC
Typical Operating Supply Voltage (V)
HTSUS
Package
Organization
PCB changed
HTS
ECCN (US)
Supplier Device Package
Address Bus Width (bit)
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Access Time
Process Technology
Package Height
Mfr
Maximum Access Time (ns)
Memory Format
Interface Type
RoHS Status
Number of Bits/Word (bit)
Package Length
Series
Write Cycle Time - Word, Page
Part Status
Package Width
Base Product Number
Minimum Operating Supply Voltage (V)
Mounting Style
Unit Weight
Data Bus Width
Supply Current - Max
RoHS
Supply Voltage - Min
Minimum Operating Temperature
Type
Moisture Sensitive
Maximum Clock Frequency
Maximum Operating Temperature
Supply Voltage - Max
USHTS

MT47H64M16NF-25E IT:M Documents

Download datasheets and manufacturer documentation for MT47H64M16NF-25E IT:M

Ersa MT47Hxx(x)M4/8/16      
Ersa Memory 24-May-2022       Tray 05-May-2022      
Ersa Micron FBGA and Component Marking Decoder      
Ersa Mult Dev Marking Chg 20/Dec/2019      

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