Email: [email protected] |Tel: +65 31252045

RFQ

Micron Technology

MT47H64M16NF-25E IT:M

Name: MT47H64M16NF-25E IT:M
Brand: Micron Technology
SKU: 774-MT47H64M16NF-25E IT:M
Price: 2.77028 USD
Availability: InStock

Manufacturer:

Micron Technology

ERSA Part #:

774-MT47H64M16NF-25E IT:M

Datasheet:

PDF Datasheet

Description:

IC DRAM 1GBIT PARALLEL 84FBGA

Standard Lead Time:

20 weeks

RoHS Status:

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality

Tech Specifications

Clock Frequency

400 MHz

Unit Weight

0.078895 oz

Part Status Code

Production

Component Density

1Gb

Number of Components

PPAP

Data Bus Width (bit)

Operating Current (mA)

160

MT47H64M16NF-25E IT:M Description

Renesas-Micron | DDR2 SDRAM

MT47H64M16NF-25E IT:M

1Gb (64M x16) Industrial DDR2 SDRAM | 1.8V | 400MHz | -40°C to +95°C | 84-ball FBGA

✔️ Industrial Temp: -40°C to +95°C ⚡ 800Mbps data rate / 400MHz clock

BRAND

Renesas
Micron

DDR2 Industrial Series

1Gb
Density

400MHz
Clock Frequency

800Mbps
Data Rate

1.8V
VDD / VDDQ

84-FBGA
8x12.5mm

Product Overview

The Renesas Electronics Corporation (formerly Micron Technology) MT47H64M16NF-25E IT:M is a 1Gb (1,073,741,824 bits) DDR2 SDRAM component organized as 64M words × 16 bits. Operating at a low 1.8V nominal voltage (±0.1V), it achieves a clock frequency of 400 MHz (800 Mbps data rate per pin) with a CAS latency of CL = 5.[reference:0] The “-25E” timing parameter indicates a 2.5 ns cycle time (tCK), standard for DDR2‑800 operation. This device is designed for high‑performance embedded, industrial, networking, and telecommunication applications requiring reliable memory in harsh environments.

The IT:M suffix denotes the industrial temperature grade, with an extended operating temperature range of -40°C to +95°C, making it suitable for outdoor and industrial control systems.[reference:1] Housed in a standard 84‑ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8.00mm × 12.50mm × 1.20mm, the MT47H64M16NF-25E IT:M delivers the performance, power efficiency, and long‑term reliability required for advanced embedded computing platforms.[reference:2]

📊 Technical Specifications

Density / Organization	1Gb (64M × 16 bits)
Memory Interface	Parallel (JEDEC DDR2 SDRAM command/address bus, 16‑bit DQ)
Clock Frequency (Max)	400 MHz — DDR2‑800 speed grade [reference:3]
Data Rate	800 Mbps per pin [reference:4]
Peak Bandwidth	1.6 GB/s (x16 @ 800 Mbps)
Supply Voltage (VDD / VDDQ)	1.7V – 1.9V (1.8V nominal) [reference:5]
Operating Temperature	Industrial: -40°C to +95°C [reference:6]
Storage Temperature	-55°C to +100°C
Package Type	84‑ball TFBGA (8.00mm × 12.50mm × 1.20mm, 0.8mm pitch) — NF package code [reference:7]
Package Dimensions	8.00 × 12.50 × 1.20 mm [reference:8]
CAS Latency (CL)	CL = 5 @ 400MHz [reference:9]
Number of Banks	8 internal banks for concurrent operation [reference:10]
Refresh	64ms, 8192 cycles （8K AREF）, AUTO and SELF REFRESH [reference:11]
Low Power Features	Posted CAS additive latency (AL), power‑down modes, temperature‑compensated refresh
On‑Die Termination (ODT)	Programmable RTT values improve signal integrity [reference:12]
Prefetch Architecture	4n‑bit prefetch [reference:13]
Burst Length	4 or 8 （programmable） [reference:14]
I/O Standard	SSTL_18 （1.8V I/O）, JEDEC standard[reference:15]
Differential Strobe	DQS, DQS# for precise data capture
Access Time (tAC)	400 ps （maximum） [reference:16]
RoHS / Halogen Free	Yes — “:M” suffix indicates green, lead‑free
Moisture Sensitivity Level	MSL 3
Part Status	Active — In production [reference:17]

✨ Key Features

✅ Extended Industrial Temperature Range – -40°C to +95°C （Tc）, ideal for outdoor, telecom, and industrial applications
✅ 1.8V Low‑Power Operation – VDD = VDDQ = 1.7V–1.9V, reduces power consumption while maintaining high performance
✅ High‑Speed 400MHz / 800Mbps – 1.6 GB/s bandwidth per component, supporting high‑throughput embedded processing
✅ 8 Internal Banks – Enables concurrent operations and reduces row cycle conflicts
✅ Programmable CAS Latency – CL = 5/4/3 for flexible timing adaptation
✅ Posted CAS Additive Latency (AL) – Improves bus efficiency by hiding command overhead
✅ Selectable Burst Length (BL) – Supports BL = 4 or 8 to match application needs
✅ On‑Die Termination (ODT) – Programmable 50Ω/75Ω/150Ω termination for better signal integrity
✅ Differential Data Strobe (DQS, DQS#) – Enables robust data capture at 800 Mbps
✅ DLL (Delay‑Locked Loop) – Aligns DQ and DQS transitions with clock edges for precise timing
✅ Auto and Self Refresh – Supports 64ms refresh (8K cycle) with temperature‑compensated options
✅ Adjustable Data‑Output Drive Strength – Optimizes signal amplitude for system‑specific loading
✅ JEDEC Standard 1.8V I/O (SSTL_18‑compatible) – Drop‑in compatible with industry‑standard DDR2 controllers
✅ 4n‑bit Prefetch Architecture – Delivers high internal read/write bandwidth with lower clock rates
✅ Industrial Quality & Long‑term Availability – Backed by Micron’s and Renesas’ commitment to extended product lifecycles

🎯 Target Applications:

Industrial PCs and embedded computing, telecommunications equipment (routers, switches), networking infrastructure, test and measurement instruments, medical imaging systems, automotive aftermarket infotainment, FPGA-based accelerators, and high‑reliability data acquisition systems.

⚡ DDR2 SDRAM Architecture & Performance

800 Mbps Data Rate

Each data pin transfers 2 bits per clock cycle via DDR (Double Data Rate) architecture, achieving an effective bandwidth of 1.6 GB/s for a x16 device.

4n‑bit Prefetch

The internal prefetch buffer accesses 4n bits per read/write operation （64 bits for x16 device）, doubling DDR1’s prefetch length for higher sustained throughput.

Posted CAS + ODT

Additive latency hides command bus conflicts; On‑Die Termination reduces motherboard component count and improves signal integrity at high frequencies.

The MT47H64M16NF-25E IT:M is optimized for systems requiring high memory bandwidth in extended temperature environments. Its 1.8V operation, 8‑bank architecture, and programmable timing parameters make it a versatile choice for industrial and embedded computing applications where reliability and longevity are critical.

🔒 Advanced DDR2 Features

🔧 Programmable READ and WRITE Latencies
The device supports independent READ latency （CAS Latency + Additive Latency） and WRITE latency （READ latency – 1）, allowing the memory controller to optimize command scheduling for maximum bus utilization.

📊 Data Strobe (DQS) with Differential Options
Differential data strobes (DQS, DQS#) provide precise capture windows for read and write operations, reducing system timing margin requirements.

🛡️ Temperature‑Compensated Self‑Refresh
The device automatically adjusts self‑refresh rate based on temperature, reducing power consumption at lower temperatures while maintaining data integrity at higher temperatures.

⏰ DLL (Delay‑Locked Loop)
An internal DLL aligns DQ and DQS transitions with the system clock （CK）, compensating for process, voltage, and temperature (PVT) variations.

📦 Ordering Information & Part Number Decoder

Orderable Part Number	Speed / Temp	Package	Description
MT47H64M16NF-25E IT:M	DDR2‑800 / -40°C to +95°C	84‑TFBGA	Industrial temperature, tray (1368 pcs/tray)
MT47H64M16NF-25E IT:M TR	DDR2‑800 / -40°C to +95°C	84‑TFBGA	Industrial, tape & reel (2000 pcs/reel) [reference:18]
MT47H64M16NF-25E AIT:M	DDR2‑800 / -40°C to +95°C	84‑TFBGA	Automotive Grade 2 (AEC‑Q100) [reference:19]
MT47H64M16NF-25E IT:M (Tube)	DDR2‑800 / -40°C to +95°C	84‑TFBGA	Tray packaging (standard)

🔍 Part Number Breakdown (MT47H64M16NF-25E IT:M):
• MT47H – Micron DDR2 SDRAM family
• 64M16 – 64M × 16 = 1Gb density
• NF – 84‑ball TFBGA package (8×12.5mm, 0.8mm pitch)
• 25E – Speed bin: 2.5ns cycle time (DDR2‑800, CL=5)
• IT – Industrial temperature range (-40°C to +95°C)
• :M – Green, lead‑free, halogen‑free, RoHS compliant

🏆 Renesas Electronics – Global Leader in Embedded Memory

Renesas Electronics Corporation (following its acquisition of Micron’s industrial DRAM portfolio) is a world‑leading semiconductor supplier, offering a comprehensive portfolio of microcontrollers, memory, analog, and power solutions. The MT47H family of DDR2 SDRAM components is designed for industrial and embedded applications requiring long lifecycles, extended temperature support, and proven reliability.

#1 Global MCU supplier – trusted by leading industrial and automotive OEMs worldwide
AEC‑Q100 qualified automotive grade options for DDR2 and DDR3L components
ISO 9001, ISO 14001, IATF 16949 certified manufacturing facilities
15‑20 year product lifecycle support – long‑term availability for industrial designs
Global FAE support – free samples, evaluation platforms, and reference designs

🌟 Why Choose MT47H64M16NF-25E IT:M?

• Industrial temperature -40°C to +95°C

• Low power 1.8V DDR2 – ideal for embedded and battery‑backed systems

• 800 Mbps / 400MHz performance for real‑time processing

• Proven reliability – Micron DDR2 architecture with billions of field hours

• Drop‑in replacement for legacy DDR2 designs requiring industrial temp

🛠️ Development Resources & Support

📄 Datasheet & App Notes

Complete 1Gb DDR2 SDRAM specification, AC/DC characteristics, timing diagrams, and hardware design guidelines.

💻 IBIS & Simulation Models

IBIS and Verilog models for signal integrity simulation and controller validation (available under NDA).

🔌 Memory Controller Support

Compatible with all major SoC DDR2 controllers (NXP, Intel, AMD, Xilinx, Altera), and FPGA soft‑core memory controllers.

Renesas offers free samples, evaluation platforms, and direct FAE support through authorized distributors. For automotive PPAP documentation, industrial reliability reports, and design‑in assistance, contact your local Renesas sales office.

📄 Certifications & Compliance

RoHS 2011/65/EU (Compliant)
REACH SVHC (Compliant)
Halogen‑free per IEC 61249-2-21
Conflict Minerals (CFSI) report available
JEDEC JESD79‑2F compliant

📦 Packaging & Logistics

Tray: 1368 pieces per tray (TFBGA)
Tape & Reel: 2000 pieces per 13" reel
Moisture Sensitivity Level: MSL 3
Lead finish: SnAgCu (SAC305) – green, lead‑free
Lead time: 8‑10 weeks ARO, stock available via distributors

FAQ

This device is a 1 Gigabit (1Gb) DDR2 SDRAM organized as 64M words × 16 bits (64M x 16). It has a maximum clock frequency of 400 MHz, delivering a peak data transfer rate of 800 MT/s (Megatransfers per second) with a CAS latency (CL) of 5 cycles [6†L4-L6][7†L19][8†L31].