Micron Technology
MT47H16M16BG-3:B TR

774-MT47H16M16BG-3:B TR
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IC DRAM 256MBIT PARALLEL 84FBGA

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Tech Specifications

Clock Frequency
333 MHz
Memory Type
Volatile
Product Status
Obsolete
Supplier Device Package
84-FBGA (8x14)
Access Time
450 ps
Package / Case
84-FBGA
Technology
SDRAM - DDR2
Voltage - Supply
1.7V ~ 1.9V
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MT47H16M16BG-3:B TR Description

MT47H16M16BG-3:B TR Description

The MT47H16M16BG-3:B TR is a high-performance 256Mbit DRAM memory IC designed by Micron Technology Inc. This memory module is organized as 16M x 16 and features a parallel memory interface, making it suitable for applications requiring high-speed data transfer and efficient memory management. The device operates at a clock frequency of 333 MHz, ensuring fast data processing capabilities. With an access time of 450 ps and a write cycle time of 15ns, the MT47H16M16BG-3:B TR delivers exceptional performance for its memory size and organization.

MT47H16M16BG-3:B TR Features

  • Memory Size and Organization: The MT47H16M16BG-3:B TR offers a memory size of 256Mbit, organized as 16M x 16, providing a substantial amount of memory in a compact form factor.
  • High-Speed Performance: Operating at a clock frequency of 333 MHz, this DRAM module ensures rapid data processing and transfer, making it ideal for high-performance computing applications.
  • Fast Access and Write Times: With an access time of 450 ps and a write cycle time of 15ns, the MT47H16M16BG-3:B TR delivers quick read and write operations, enhancing overall system efficiency.
  • Volatile Memory: As a volatile memory type, the MT47H16M16BG-3:B TR retains data only while power is supplied, which is beneficial for applications requiring dynamic memory allocation.
  • Wide Voltage Range: The device operates within a voltage range of 1.7V to 1.9V, providing flexibility in power supply requirements.
  • Surface Mount Technology: The MT47H16M16BG-3:B TR is designed for surface mount applications, allowing for efficient integration into modern electronic systems.
  • Compliance and Standards: The MT47H16M16BG-3:B TR is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and safety standards for electronic components.
  • Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the device is suitable for various manufacturing environments while maintaining reliability.
  • Operating Temperature Range: The MT47H16M16BG-3:B TR operates within a temperature range of 0°C to 85°C (TC), making it suitable for a wide range of industrial and consumer applications.

MT47H16M16BG-3:B TR Applications

The MT47H16M16BG-3:B TR is ideal for a variety of applications that require high-speed, high-capacity memory solutions. Some specific use cases include:

  • Networking Equipment: The fast access and write times make this DRAM module suitable for routers, switches, and other networking devices that require rapid data processing.
  • Embedded Systems: The compact size and surface mount design make it an excellent choice for embedded systems in consumer electronics, automotive, and industrial applications.
  • Data Storage Systems: The high memory capacity and organization make it suitable for data storage systems that require efficient memory management.
  • Telecommunications: The MT47H16M16BG-3:B TR can be used in telecommunications equipment where high-speed data transfer and processing are critical.

Conclusion of MT47H16M16BG-3:B TR

The MT47H16M16BG-3:B TR from Micron Technology Inc. is a high-performance DRAM memory IC that offers a combination of fast access times, high memory capacity, and efficient power consumption. Its parallel memory interface and surface mount design make it suitable for a wide range of applications, from networking equipment to embedded systems. Despite being an obsolete product, the MT47H16M16BG-3:B TR remains a reliable and efficient memory solution for systems requiring high-speed data processing and dynamic memory allocation.

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