
Micron Technology
MT47H16M16BG-3:B TR
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
MT47H16M16BG-3:B TR Description
MT47H16M16BG-3:B TR Description
The MT47H16M16BG-3:B TR is a high-performance 256Mbit DRAM memory IC designed by Micron Technology Inc. This memory module is organized as 16M x 16 and features a parallel memory interface, making it suitable for applications requiring high-speed data transfer and efficient memory management. The device operates at a clock frequency of 333 MHz, ensuring fast data processing capabilities. With an access time of 450 ps and a write cycle time of 15ns, the MT47H16M16BG-3:B TR delivers exceptional performance for its memory size and organization.
MT47H16M16BG-3:B TR Features
- Memory Size and Organization: The MT47H16M16BG-3:B TR offers a memory size of 256Mbit, organized as 16M x 16, providing a substantial amount of memory in a compact form factor.
- High-Speed Performance: Operating at a clock frequency of 333 MHz, this DRAM module ensures rapid data processing and transfer, making it ideal for high-performance computing applications.
- Fast Access and Write Times: With an access time of 450 ps and a write cycle time of 15ns, the MT47H16M16BG-3:B TR delivers quick read and write operations, enhancing overall system efficiency.
- Volatile Memory: As a volatile memory type, the MT47H16M16BG-3:B TR retains data only while power is supplied, which is beneficial for applications requiring dynamic memory allocation.
- Wide Voltage Range: The device operates within a voltage range of 1.7V to 1.9V, providing flexibility in power supply requirements.
- Surface Mount Technology: The MT47H16M16BG-3:B TR is designed for surface mount applications, allowing for efficient integration into modern electronic systems.
- Compliance and Standards: The MT47H16M16BG-3:B TR is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and safety standards for electronic components.
- Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the device is suitable for various manufacturing environments while maintaining reliability.
- Operating Temperature Range: The MT47H16M16BG-3:B TR operates within a temperature range of 0°C to 85°C (TC), making it suitable for a wide range of industrial and consumer applications.
MT47H16M16BG-3:B TR Applications
The MT47H16M16BG-3:B TR is ideal for a variety of applications that require high-speed, high-capacity memory solutions. Some specific use cases include:
- Networking Equipment: The fast access and write times make this DRAM module suitable for routers, switches, and other networking devices that require rapid data processing.
- Embedded Systems: The compact size and surface mount design make it an excellent choice for embedded systems in consumer electronics, automotive, and industrial applications.
- Data Storage Systems: The high memory capacity and organization make it suitable for data storage systems that require efficient memory management.
- Telecommunications: The MT47H16M16BG-3:B TR can be used in telecommunications equipment where high-speed data transfer and processing are critical.
Conclusion of MT47H16M16BG-3:B TR
The MT47H16M16BG-3:B TR from Micron Technology Inc. is a high-performance DRAM memory IC that offers a combination of fast access times, high memory capacity, and efficient power consumption. Its parallel memory interface and surface mount design make it suitable for a wide range of applications, from networking equipment to embedded systems. Despite being an obsolete product, the MT47H16M16BG-3:B TR remains a reliable and efficient memory solution for systems requiring high-speed data processing and dynamic memory allocation.



.png)
















.png?x-oss-process=image/format,webp/resize,h_32)










