Micron Technology_MT47H256M4BT-3:A

Micron Technology
MT47H256M4BT-3:A  
Memory ICs Products

Micron Technology
MT47H256M4BT-3:A
774-MT47H256M4BT-3:A
Ersa
Micron Technology-MT47H256M4BT-3:A-datasheets-2259163.pdf
IC DRAM 1GBIT PARALLEL 92FBGA
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MT47H256M4BT-3:A Description

MT47H256M4BT-3:A Description

The MT47H256M4BT-3:A is a high-performance DRAM memory IC designed for demanding applications requiring fast data access and reliable performance. Manufactured by Micron Technology Inc., this IC features a memory organization of 256M x 4, providing a total memory size of 1 Gbit. The device operates with a clock frequency of 333 MHz, ensuring rapid data processing capabilities. Its access time of 450 picoseconds and write cycle time of 15 nanoseconds make it highly efficient for high-speed data transactions.

The MT47H256M4BT-3:A is designed for surface mount applications and is available in a 92FBGA package, making it suitable for compact and space-constrained designs. The memory type is volatile, meaning it requires a continuous power supply to retain data. The supply voltage range of 1.7V to 1.9V ensures compatibility with modern low-power systems. The operating temperature range of 0°C to 85°C (TC) makes it suitable for a wide range of industrial and consumer applications.

MT47H256M4BT-3:A Features

  • High-Speed Performance: With a clock frequency of 333 MHz and an access time of 450 picoseconds, the MT47H256M4BT-3:A offers exceptional speed for data-intensive applications.
  • Volatile Memory: As a DRAM device, it provides fast read and write capabilities, essential for applications requiring frequent data updates.
  • Low-Power Operation: The supply voltage range of 1.7V to 1.9V ensures energy efficiency, making it ideal for battery-operated and low-power systems.
  • Robust Packaging: The 92FBGA package provides a compact and reliable solution, suitable for surface mount technology (SMT) and high-density PCB designs.
  • Compliance and Safety: The MT47H256M4BT-3:A is REACH unaffected and ROHS3 compliant, ensuring it meets environmental and safety standards.
  • Moisture Sensitivity Level (MSL): Rated at MSL 5 (48 Hours), it is suitable for environments with varying humidity levels, ensuring long-term reliability.

MT47H256M4BT-3:A Applications

The MT47H256M4BT-3:A is ideal for a variety of applications that demand high-speed data processing and reliable memory performance. Some specific use cases include:

  • Networking Equipment: Ideal for routers, switches, and other networking devices that require fast data buffering and processing.
  • Consumer Electronics: Suitable for high-performance gaming consoles, smart TVs, and multimedia devices where quick data access is crucial.
  • Industrial Control Systems: Provides reliable memory solutions for PLCs, industrial PCs, and automation systems.
  • Telecommunications: Used in base stations and communication infrastructure for efficient data handling and processing.

Conclusion of MT47H256M4BT-3:A

The MT47H256M4BT-3:A is a versatile and high-performance DRAM memory IC that offers significant advantages over similar models. Its combination of fast access times, low-power operation, and robust packaging makes it an excellent choice for a wide range of applications. Whether used in consumer electronics, industrial systems, or networking equipment, the MT47H256M4BT-3:A ensures reliable and efficient memory performance. Its compliance with environmental and safety standards further enhances its suitability for modern electronics design.

Tech Specifications

Clock Frequency
Memory Type
Product Status
Supplier Device Package
Access Time
Package / Case
Technology
Voltage - Supply
REACH Status
Mfr
Memory Format
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
Memory Interface
ECCN
Memory Organization
Mounting Type
Series
Write Cycle Time - Word, Page
Memory Size
HTSUS
Package
Base Product Number

MT47H256M4BT-3:A Documents

Download datasheets and manufacturer documentation for MT47H256M4BT-3:A

Ersa MT47H256M4,128M8,64M16      
Ersa Standard Pkg Label Chg 20/Feb/2019       Memory 24-May-2022      

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