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MT47H256M8EB-187E:C TR

MT47H256M8EB-187E:C TR Description

The MT47H256M8EB-187E:C TR is a high-performance, 2 Gbit DRAM memory IC chip designed by Micron Technology Inc. This memory module features a parallel memory interface and is organized as 256M x 8, providing significant storage capacity in a compact form factor. The device operates within a supply voltage range of 1.7V to 1.9V and supports a clock frequency of 533 MHz, ensuring fast and efficient data processing. With an access time of 350 picoseconds and a write cycle time of 15 nanoseconds, the MT47H256M8EB-187E:C TR delivers exceptional performance for demanding applications. The memory is volatile, meaning it retains data only while powered, and is suitable for use in environments with an operating temperature range of 0°C to 85°C. The chip is packaged in a surface-mount 60FBGA format and is available in tape and reel (TR) packaging, making it ideal for automated assembly processes. Despite its obsolete product status, the MT47H256M8EB-187E:C TR remains a robust choice for specific legacy systems and applications requiring high-density DRAM solutions.

MT47H256M8EB-187E:C TR Features

• High Capacity and Organization: The MT47H256M8EB-187E:C TR offers a memory organization of 256M x 8, providing a total memory size of 2 Gbit. This high-density configuration is ideal for applications requiring substantial memory capacity.
• Fast Performance: With a clock frequency of 533 MHz, an access time of 350 picoseconds, and a write cycle time of 15 nanoseconds, the MT47H256M8EB-187E:C TR ensures rapid data access and transfer, enhancing overall system performance.
• Flexible Voltage Range: The device operates within a supply voltage range of 1.7V to 1.9V, offering flexibility in power supply design and compatibility with various power management systems.
• Robust Packaging: The MT47H256M8EB-187E:C TR is packaged in a surface-mount 60FBGA format, making it suitable for high-density printed circuit board (PCB) layouts. The tape and reel (TR) packaging facilitates efficient handling and assembly in automated manufacturing processes.
• Compliance and Safety: The MT47H256M8EB-187E:C TR is REACH unaffected and RoHS3 compliant, ensuring it meets stringent environmental and safety standards. The moisture sensitivity level (MSL) of 3 (168 hours) further enhances its reliability in various environmental conditions.

MT47H256M8EB-187E:C TR Applications

The MT47H256M8EB-187E:C TR is well-suited for a variety of applications that demand high-density, high-speed DRAM solutions. Some specific use cases include:

• Networking Equipment: Ideal for routers, switches, and other networking devices that require fast data processing and large memory capacity to handle high-speed data traffic.
• Telecommunications: Suitable for base stations and other telecommunication infrastructure that need reliable and high-performance memory to manage complex data operations.
• Industrial Control Systems: Applicable in industrial automation and control systems where real-time data processing and storage are critical for efficient operation.
• Legacy Systems: Given its obsolete status, the MT47H256M8EB-187E:C TR is particularly valuable for maintaining and upgrading legacy systems that rely on this specific memory configuration.

Conclusion of MT47H256M8EB-187E:C TR

The MT47H256M8EB-187E:C TR is a high-performance, 2 Gbit DRAM memory IC chip that offers significant capacity and fast performance in a compact, surface-mount package. Despite its obsolete status, its robust features and compliance with environmental standards make it a reliable choice for specific applications, particularly legacy systems and high-density memory requirements. With its fast access and write cycle times, flexible voltage range, and compatibility with automated assembly processes, the MT47H256M8EB-187E:C TR continues to provide value in the electronics industry.