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MT47H256M8THN-25E:M TR

MT47H256M8THN-25E:M TR Description

The MT47H256M8THN-25E:M TR is a high-performance, 2Gbit DRAM memory IC designed for demanding applications requiring fast access times and reliable data storage. Manufactured by Micron Technology Inc., this Parallel DRAM features a 256M x 8 memory organization, providing significant storage capacity in a compact 63FBGA package. The device operates within a supply voltage range of 1.7V to 1.9V and supports a clock frequency of 400 MHz, ensuring efficient data processing and transfer rates. With an access time of 400 picoseconds and a write cycle time of 15 nanoseconds, this DRAM is optimized for high-speed operations. The MT47H256M8THN-25E:M TR is suitable for surface mount applications and is packaged in tape and reel format, facilitating automated assembly processes. Despite its obsolescence, the MT47H256M8THN-25E:M TR remains a viable option for legacy systems and specific applications where its unique performance characteristics are required.

MT47H256M8THN-25E:M TR Features

• High Memory Capacity: 2Gbit DRAM with a 256M x 8 organization, offering substantial storage for complex data processing tasks.
• Fast Access Times: Achieves an access time of 400 picoseconds, enabling rapid data retrieval and high-speed operations.
• Efficient Write Cycles: Features a write cycle time of 15 nanoseconds, ensuring quick data updates and minimal latency.
• Wide Operating Voltage Range: Operates within a supply voltage range of 1.7V to 1.9V, providing flexibility in power supply design.
• High Clock Frequency: Supports a clock frequency of 400 MHz, facilitating high-speed data transfer and processing.
• Surface Mount Compatibility: Designed for surface mount applications, making it suitable for modern PCB assembly techniques.
• Moisture Sensitivity Level 3: Certified for 168 hours of moisture resistance, ensuring reliability in various environmental conditions.
• Compliance and Safety: RoHS3 compliant and REACH unaffected, meeting industry standards for environmental and health safety.
• Parallel Memory Interface: Utilizes a parallel interface for efficient data communication with other system components.

MT47H256M8THN-25E:M TR Applications

The MT47H256M8THN-25E:M TR is ideal for applications requiring high-speed data processing and large memory capacity. Its fast access times and efficient write cycles make it suitable for:

• Networking Equipment: Routers, switches, and other network devices that require rapid data handling and storage.
• Telecommunications: Base stations and communication infrastructure where high-speed data transfer is critical.
• Industrial Control Systems: Real-time control systems that demand quick response times and reliable data storage.
• Embedded Systems: Complex embedded systems in automotive, aerospace, and medical equipment where high performance and reliability are paramount.
• Legacy Systems: Older systems that still rely on this specific DRAM configuration for continued operation.

Conclusion of MT47H256M8THN-25E:M TR

The MT47H256M8THN-25E:M TR, despite being obsolete, remains a robust and reliable DRAM solution for applications requiring high-speed data processing and significant storage capacity. Its fast access times, efficient write cycles, and wide operating voltage range make it a standout choice for various demanding applications. The device's compliance with industry standards and its surface mount compatibility further enhance its appeal. For legacy systems and specific applications where its unique performance characteristics are essential, the MT47H256M8THN-25E:M TR continues to be a viable and valuable option in the electronics industry.