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MT47H32M16BN-5E IT:D TR

MT47H32M16BN-5E IT:D TR Description

The MT47H32M16BN-5E IT:D TR is a high-performance DRAM memory IC designed by Micron Technology Inc., offering a memory size of 512 Mbit organized as 32M x 16. This device is packaged in an 84FBGA format and is suitable for surface mount applications. It operates within a supply voltage range of 1.7V to 1.9V and features a clock frequency of 200 MHz. The memory access time is a rapid 600 ps, ensuring quick data retrieval. The write cycle time for words and pages is 15 ns, further enhancing its performance capabilities. This DRAM is volatile, meaning it requires power to maintain data storage. The MT47H32M16BN-5E IT:D TR is REACH unaffected and RoHS3 compliant, adhering to environmental and safety standards. It has a moisture sensitivity level (MSL) of 3, allowing for 168 hours of exposure before assembly. The memory interface is parallel, facilitating straightforward integration into various systems. This product is currently obsolete, but it remains a valuable option for applications requiring high-speed, high-density memory solutions.

MT47H32M16BN-5E IT:D TR Features

• High-Speed Performance: With a clock frequency of 200 MHz and an access time of 600 ps, the MT47H32M16BN-5E IT:D TR delivers rapid data access, making it ideal for applications requiring quick data retrieval.
• High-Density Storage: The 512 Mbit memory size, organized as 32M x 16, provides substantial storage capacity in a compact form factor.
• Low-Power Operation: Operating within a voltage range of 1.7V to 1.9V, this DRAM IC offers energy-efficient performance, suitable for power-sensitive applications.
• Fast Write Cycle: The 15 ns write cycle time ensures efficient data writing, enhancing overall system performance.
• Environmental Compliance: Being REACH unaffected and RoHS3 compliant, this product meets stringent environmental and safety standards, making it suitable for a wide range of industries.
• Moisture Resistance: With an MSL of 3, the MT47H32M16BN-5E IT:D TR can withstand up to 168 hours of exposure before assembly, providing flexibility in manufacturing processes.
• Parallel Interface: The parallel memory interface simplifies integration into existing systems, reducing design complexity and time-to-market.

MT47H32M16BN-5E IT:D TR Applications

The MT47H32M16BN-5E IT:D TR is well-suited for a variety of applications where high-speed, high-density memory is required. Some specific use cases include:

• Networking Equipment: Ideal for routers, switches, and other networking devices that require fast data processing and storage.
• Telecommunications: Suitable for base stations and other telecommunication infrastructure where rapid data access and high reliability are critical.
• Embedded Systems: Applicable in embedded systems that demand efficient memory solutions with low power consumption.
• Industrial Control Systems: Useful in industrial applications where robust, high-speed memory is necessary for real-time data processing and control.
• Consumer Electronics: Can be employed in high-end consumer electronics such as gaming consoles and multimedia devices that require fast memory access for optimal performance.

Conclusion of MT47H32M16BN-5E IT:D TR

The MT47H32M16BN-5E IT:D TR from Micron Technology Inc. is a high-performance DRAM IC that offers a combination of high-speed operation, high-density storage, and low-power consumption. Its fast access time and write cycle capabilities make it an excellent choice for applications requiring rapid data processing. Despite being obsolete, its unique features and compliance with environmental standards ensure it remains a reliable option for various industries. The MT47H32M16BN-5E IT:D TR is packaged in a surface mount 84FBGA format, making it easy to integrate into modern electronic systems.