Micron Technology_MT47H512M4THN-25E:H
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Micron Technology
MT47H512M4THN-25E:H

774-MT47H512M4THN-25E:H
PDF Datasheet
IC DRAM 2GBIT PARALLEL 63FBGA

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Tech Specifications

Clock Frequency
400 MHz
Part Status Code
Obsolete
Tape & Reel Qty
1000
Component Density
2Gb
I/O Voltage
1.8 VOLTS
Number of Components
2
Memory Type
Volatile
Product Status
Obsolete
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MT47H512M4THN-25E:H Description

MT47H512M4THN-25E:H Description

The MT47H512M4THN-25E:H is a high-performance 2Gbit DRAM memory IC chip designed by Micron Technology Inc. This device is part of the obsolete product category, but it continues to be a valuable component for specific applications due to its robust technical specifications. The memory is organized in a 512M x 4 format, offering a parallel memory interface that ensures efficient data transfer. The chip operates within a supply voltage range of 1.7V to 1.9V and supports a clock frequency of 400 MHz, enabling fast and reliable performance. With an access time of 400 picoseconds and a write cycle time of 15 nanoseconds, the MT47H512M4THN-25E:H delivers exceptional speed and efficiency. The operating temperature range of 0°C to 85°C makes it suitable for a variety of industrial and commercial environments. The chip is packaged in a 63FBGA format, which is ideal for surface mount applications, and it is REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory adherence.

MT47H512M4THN-25E:H Features

  • High-Speed Performance: With a clock frequency of 400 MHz and an access time of 400 picoseconds, the MT47H512M4THN-25E:H provides rapid data access and transfer capabilities, making it suitable for high-speed computing and data-intensive applications.
  • Volatile Memory: As a DRAM device, the MT47H512M4THN-25E:H offers volatile memory, which is essential for applications requiring frequent data updates and high-speed processing.
  • Low Voltage Operation: The supply voltage range of 1.7V to 1.9V ensures energy efficiency and compatibility with modern low-power systems.
  • Robust Packaging: The 63FBGA package format is designed for surface mount applications, providing a compact and reliable solution for embedded systems and PCB designs.
  • Environmental Compliance: The MT47H512M4THN-25E:H is REACH unaffected and RoHS3 compliant, ensuring it meets stringent environmental and regulatory standards.
  • Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the chip is well-suited for manufacturing processes that require protection against moisture.

MT47H512M4THN-25E:H Applications

The MT47H512M4THN-25E:H is ideal for a range of applications where high-speed data processing and efficient memory management are critical. Some specific use cases include:

  • Networking Equipment: High-speed routers and switches benefit from the rapid data access capabilities of the MT47H512M4THN-25E:H, ensuring efficient packet processing and minimal latency.
  • Telecommunications: Base stations and other telecom infrastructure can leverage the chip's performance to handle large volumes of data traffic.
  • Industrial Control Systems: The robustness and reliability of the MT47H512M4THN-25E:H make it suitable for industrial applications where continuous operation and quick response times are essential.
  • Embedded Systems: The compact 63FBGA package and surface mount compatibility make this chip ideal for embedded systems in various industries, including automotive, aerospace, and medical devices.

Conclusion of MT47H512M4THN-25E:H

Despite being an obsolete product, the MT47H512M4THN-25E:H remains a powerful and versatile DRAM memory IC chip. Its high-speed performance, low voltage operation, and robust packaging make it a reliable choice for applications requiring fast data processing and efficient memory management. The chip's compliance with environmental and regulatory standards ensures its suitability for modern manufacturing processes. While newer models may offer advanced features, the MT47H512M4THN-25E:H continues to provide significant value in specific applications, making it a worthwhile consideration for engineers and designers in need of a reliable DRAM solution.

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