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MT47H512M4THN-25E:M TR

MT47H512M4THN-25E:M TR Description

The MT47H512M4THN-25E:M TR is a high-performance, 2Gbit DRAM memory IC designed for demanding applications requiring fast data access and reliable performance. Manufactured by Micron Technology Inc., this memory IC features a parallel memory interface and is packaged in a 63FBGA form factor, making it suitable for surface-mount applications. The device operates within a voltage range of 1.7V to 1.9V and supports a clock frequency of 400 MHz, ensuring efficient data processing. With an access time of 400 picoseconds and a write cycle time of 15 nanoseconds, the MT47H512M4THN-25E:M TR delivers rapid data retrieval and storage capabilities. The memory is organized as 512M x 4, providing a versatile memory structure for various system architectures.

MT47H512M4THN-25E:M TR Features

• High-Speed Performance: The MT47H512M4THN-25E:M TR boasts a clock frequency of 400 MHz and an access time of 400 picoseconds, enabling rapid data access and transfer.
• Volatile Memory: As a DRAM device, it offers volatile memory storage, which is ideal for applications requiring frequent data updates and refreshes.
• Wide Operating Voltage Range: The memory IC operates within a voltage range of 1.7V to 1.9V, providing flexibility in power supply design.
• Compliance and Safety: The MT47H512M4THN-25E:M TR is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and safety standards.
• Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the device is suitable for a variety of manufacturing environments.
• Operating Temperature Range: The memory IC operates reliably within a temperature range of 0°C to 85°C (TC), making it suitable for industrial and consumer applications.
• Parallel Memory Interface: The parallel memory interface ensures compatibility with a wide range of systems and architectures.
• Memory Organization: The 512M x 4 memory organization provides a flexible and efficient memory structure for various applications.
• Surface Mount Packaging: The 63FBGA package is ideal for surface-mount applications, ensuring compact and reliable integration into modern electronic systems.

MT47H512M4THN-25E:M TR Applications

The MT47H512M4THN-25E:M TR is ideal for applications that demand high-speed data processing and reliable memory performance. Key applications include:

• Networking Equipment: Routers, switches, and other networking devices benefit from the fast data access and high-density memory storage.
• Consumer Electronics: High-performance gaming consoles, multimedia devices, and smart TVs can leverage the rapid data retrieval capabilities of this DRAM IC.
• Industrial Control Systems: Real-time data processing and control systems in industrial environments can utilize the robust performance and reliability of the MT47H512M4THN-25E:M TR.
• Telecommunications: Base stations and communication infrastructure can take advantage of the high-speed memory to manage large volumes of data efficiently.

Conclusion of MT47H512M4THN-25E:M TR

The MT47H512M4THN-25E:M TR is a high-performance DRAM memory IC that offers significant advantages over similar models. Its fast access times, wide operating voltage range, and compliance with environmental standards make it a reliable choice for a variety of applications. While the product is now obsolete, its technical specifications and performance benefits continue to make it a valuable component for legacy systems and applications requiring high-speed, volatile memory solutions.