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MT47H64M4BP-37E:B TR

MT47H64M4BP-37E:B TR Description

The MT47H64M4BP-37E:B TR is a high-performance DRAM memory IC designed by Micron Technology Inc., a leading provider of semiconductor solutions. This IC offers a memory size of 256 Mbit, organized in a 64M x 4 configuration, making it suitable for applications requiring substantial memory capacity. The device operates with a clock frequency of 267 MHz and features an access time of 500 picoseconds, ensuring rapid data retrieval and processing. The memory is volatile, meaning it requires a continuous power supply to retain data, with a voltage range of 1.7V to 1.9V.

The MT47H64M4BP-37E:B TR is packaged in a 60-ball FBGA format, specifically designed for surface-mount applications. This packaging method enhances the IC’s durability and reliability, making it ideal for use in compact and high-density electronic systems. The memory interface is parallel, facilitating efficient data transfer and synchronization with other system components.

MT47H64M4BP-37E:B TR Features

• High-Speed Performance: With a clock frequency of 267 MHz and an access time of 500 picoseconds, the MT47H64M4BP-37E:B TR delivers exceptional speed and efficiency, making it suitable for high-performance computing and data-intensive applications.
• Volatile Memory: The volatile nature of the DRAM ensures that data is only retained while the device is powered, providing a secure and reliable memory solution.
• Wide Voltage Range: The IC operates within a voltage range of 1.7V to 1.9V, offering flexibility in power supply design and compatibility with various systems.
• Compliance and Safety: The MT47H64M4BP-37E:B TR is REACH unaffected and RoHS3 compliant, ensuring it meets the highest environmental and safety standards.
• Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the IC is well-suited for environments with varying humidity levels, providing robustness against moisture-related issues.
• Operating Temperature Range: The device operates reliably within a temperature range of 0°C to 85°C, making it suitable for a wide range of industrial and consumer applications.
• Write Cycle Time: The write cycle time of 15ns ensures efficient data writing operations, enhancing overall system performance.

MT47H64M4BP-37E:B TR Applications

The MT47H64M4BP-37E:B TR is ideal for a variety of applications that demand high-speed, high-capacity memory solutions. Some specific use cases include:

• Computing Systems: Ideal for desktop and server applications where rapid data access and processing are critical.
• Networking Equipment: Suitable for routers, switches, and other networking devices that require fast memory to handle high data throughput.
• Consumer Electronics: Applicable in devices such as gaming consoles, smart TVs, and multimedia players that need efficient memory management for smooth operation.
• Industrial Control Systems: Useful in automation and control systems where reliability and performance are paramount.

Conclusion of MT47H64M4BP-37E:B TR

The MT47H64M4BP-37E:B TR from Micron Technology Inc. stands out as a high-performance DRAM IC, offering a combination of speed, capacity, and reliability. Its 267 MHz clock frequency and 500 picoseconds access time ensure rapid data processing, while the 64M x 4 memory organization provides substantial storage capacity. The device’s compliance with environmental and safety standards, along with its robustness against moisture and varying temperatures, makes it a versatile choice for a wide range of applications. Whether used in computing systems, networking equipment, consumer electronics, or industrial control systems, the MT47H64M4BP-37E:B TR delivers exceptional performance and reliability, making it a preferred choice for engineers and designers in the electronics industry.