Micron Technology_MT47H64M8CB-5E:B TR
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Micron Technology
MT47H64M8CB-5E:B TR

774-MT47H64M8CB-5E:B TR
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IC DRAM 512MBIT PARALLEL 60FBGA

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Tech Specifications

Clock Frequency
200 MHz
Memory Type
Volatile
Product Status
Obsolete
Supplier Device Package
60-FBGA
Access Time
600 ps
Package / Case
60-FBGA
Technology
SDRAM - DDR2
Voltage - Supply
1.7V ~ 1.9V
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MT47H64M8CB-5E:B TR Description

MT47H64M8CB-5E:B TR Description

The MT47H64M8CB-5E:B TR is a high-performance, 512 Mbit DRAM memory IC chip manufactured by Micron Technology Inc. This device is designed for applications requiring fast access times and reliable data storage. The MT47H64M8CB-5E:B TR features a parallel memory interface and is packaged in a 60-ball BGA (Ball Grid Array) format, making it suitable for surface-mount applications. This memory chip operates within a supply voltage range of 1.7V to 1.9V and supports a clock frequency of 200 MHz, ensuring efficient data transfer and processing.

MT47H64M8CB-5E:B TR Features

  • Memory Organization: The MT47H64M8CB-5E:B TR is organized as 64M x 8, providing a total memory size of 512 Mbit. This configuration allows for efficient memory addressing and data storage.
  • Access Time: With an access time of 600 picoseconds, this DRAM chip offers rapid data retrieval, making it ideal for high-speed applications.
  • Write Cycle Time: The write cycle time for this memory IC is 15 nanoseconds, ensuring quick data writing capabilities.
  • Operating Temperature: The device operates within a temperature range of 0°C to 85°C, making it suitable for a wide range of environmental conditions.
  • Voltage - Supply: The supply voltage range of 1.7V to 1.9V ensures compatibility with various power supply systems.
  • Moisture Sensitivity Level (MSL): Rated at MSL 5 (48 Hours), this memory IC is designed to withstand moderate moisture exposure during manufacturing and assembly processes.
  • Compliance: The MT47H64M8CB-5E:B TR is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and safety standards.
  • Packaging: The device is available in a Tape & Reel (TR) package, facilitating easy handling and integration into automated assembly lines.

MT47H64M8CB-5E:B TR Applications

The MT47H64M8CB-5E:B TR is well-suited for a variety of applications that demand high-speed data processing and reliable memory storage. Some specific use cases include:

  • Networking Equipment: Ideal for routers, switches, and other networking devices that require fast data access and storage.
  • Telecommunications: Suitable for base stations and other telecommunication infrastructure where high-speed memory is crucial.
  • Industrial Control Systems: Applicable in industrial automation and control systems that need reliable and fast memory solutions.
  • Consumer Electronics: Used in high-end consumer electronics such as gaming consoles, digital cameras, and multimedia devices that require efficient data handling.

Conclusion of MT47H64M8CB-5E:B TR

The MT47H64M8CB-5E:B TR from Micron Technology Inc. is a robust and high-performance DRAM memory IC chip. Its fast access time, efficient write cycle time, and wide operating temperature range make it a reliable choice for various high-speed applications. Despite being marked as obsolete, its technical specifications and compliance with industry standards ensure it remains a viable option for legacy systems and specific use cases. The MT47H64M8CB-5E:B TR's surface-mount packaging and parallel memory interface further enhance its suitability for modern electronic designs.

FAQ

What voltage specification is listed for MT47H64M8CB-5E:B TR?
The listed voltage-related specification for MT47H64M8CB-5E:B TR is 1.7V ~ 1.9V.
What package or case is MT47H64M8CB-5E:B TR available in?
What operating temperature range does MT47H64M8CB-5E:B TR support?
Is MT47H64M8CB-5E:B TR currently in stock?
What is the mounting type of MT47H64M8CB-5E:B TR?
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