
Micron Technology
MT47R256M4CF-3:H
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MT47R256M4CF-3:H Description
MT47R256M4CF-3:H Description
The MT47R256M4CF-3:H is a high-performance, 1 Gbit DRAM memory IC designed by Micron Technology Inc. This device features a parallel memory interface and is packaged in a 60FBGA format, making it ideal for surface-mount applications. With a clock frequency of 333 MHz and an access time of 450 picoseconds, the MT47R256M4CF-3:H delivers rapid data retrieval and processing capabilities. Its memory organization is structured as 256M x 4, providing efficient data management and storage solutions. The supply voltage range of 1.55V to 1.9V ensures compatibility with a variety of power supply configurations, while the operating temperature range of 0°C to 85°C (TC) makes it suitable for a wide range of environmental conditions.
MT47R256M4CF-3:H Features
- High-Speed Performance: The MT47R256M4CF-3:H operates at a clock frequency of 333 MHz, ensuring fast data processing and retrieval. Its access time of 450 picoseconds further enhances its performance, making it suitable for applications requiring rapid data access.
- Volatile Memory: As a DRAM device, the MT47R256M4CF-3:H provides volatile memory storage, which is ideal for applications where data needs to be frequently updated and accessed.
- Efficient Memory Organization: The 256M x 4 memory organization allows for efficient data management and storage, optimizing the use of memory space and improving overall system performance.
- Wide Voltage Range: The supply voltage range of 1.55V to 1.9V ensures compatibility with various power supply configurations, providing flexibility in system design.
- Robust Compliance: The MT47R256M4CF-3:H is REACH unaffected and RoHS3 compliant, ensuring it meets stringent environmental and regulatory standards.
- Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the MT47R256M4CF-3:H is designed to withstand moisture exposure during manufacturing and storage processes.
- Write Cycle Time: The write cycle time of 15ns ensures efficient data writing operations, further enhancing the overall performance of the device.
MT47R256M4CF-3:H Applications
The MT47R256M4CF-3:H is ideal for a variety of applications that require high-speed, efficient memory solutions. Some specific use cases include:
- Networking Equipment: The high-speed performance and efficient memory organization make it suitable for routers, switches, and other networking devices that require rapid data processing and storage.
- Telecommunications: The MT47R256M4CF-3:H can be used in base stations, mobile devices, and other telecommunication equipment where quick data access and processing are critical.
- Industrial Control Systems: The robust compliance and wide operating temperature range make it ideal for industrial control systems that operate in varying environmental conditions.
- Consumer Electronics: The device can be used in high-performance consumer electronics such as gaming consoles, smart TVs, and other devices that require fast and efficient memory solutions.
Conclusion of MT47R256M4CF-3:H
The MT47R256M4CF-3:H is a high-performance DRAM memory IC that offers a combination of speed, efficiency, and compliance. Its 333 MHz clock frequency and 450 picoseconds access time ensure rapid data processing, while the 256M x 4 memory organization provides efficient data management. The wide supply voltage range and robust compliance make it suitable for a variety of applications, including networking equipment, telecommunications, industrial control systems, and consumer electronics. With its high-speed performance and efficient memory organization, the MT47R256M4CF-3:H stands out as a reliable and efficient memory solution for demanding applications.



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