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MT47R512M4EB-25E:C

MT47R512M4EB-25E:C Description

The MT47R512M4EB-25E:C is a high-performance, 2Gbit DRAM memory IC designed by Micron Technology Inc. This device is part of the Memory ICs Products category and is ideal for applications requiring fast access times and high memory density. The MT47R512M4EB-25E:C features a parallel memory interface and is housed in a 60FBGA package, making it suitable for surface mount applications.

MT47R512M4EB-25E:C Features

• Memory Organization: The MT47R512M4EB-25E:C is organized as 512M x 4, providing a total memory size of 2Gbit. This organization ensures efficient data storage and retrieval.
• Access Time: With an access time of 400 picoseconds, this DRAM IC offers extremely fast data access, making it suitable for high-speed applications.
• Write Cycle Time: The write cycle time for a word or page is 15 nanoseconds, ensuring quick data write operations.
• Clock Frequency: The device operates at a clock frequency of 400 MHz, supporting high-speed data processing.
• Voltage - Supply: The MT47R512M4EB-25E:C operates within a voltage range of 1.55V to 1.9V, providing flexibility in power supply requirements.
• Operating Temperature: The operating temperature range is from 0°C to 85°C (TC), making it suitable for a wide range of environmental conditions.
• Moisture Sensitivity Level (MSL): The device has an MSL of 3 (168 Hours), ensuring reliability in various humidity conditions.
• Compliance: The MT47R512M4EB-25E:C is REACH Unaffected and ROHS3 Compliant, meeting stringent environmental and safety standards.
• Packaging: The device is packaged in a Tray, ensuring safe handling and storage during manufacturing and assembly processes.

MT47R512M4EB-25E:C Applications

The MT47R512M4EB-25E:C is ideal for applications that require high-speed data processing and large memory capacity. Specific use cases include:

• High-Performance Computing: The fast access times and high memory density make this DRAM IC suitable for servers and high-performance computing systems.
• Networking Equipment: The device's high-speed capabilities are beneficial for routers, switches, and other networking equipment that require rapid data handling.
• Consumer Electronics: The MT47R512M4EB-25E:C can be used in gaming consoles, smart TVs, and other consumer electronics that demand high-speed memory.
• Industrial Applications: The wide operating temperature range and moisture sensitivity level make this device suitable for industrial control systems and embedded applications.

Conclusion of MT47R512M4EB-25E:C

The MT47R512M4EB-25E:C from Micron Technology Inc. is a high-performance DRAM IC that offers significant advantages over similar models. Its fast access time, high memory density, and wide operating temperature range make it an ideal choice for a variety of applications, from high-performance computing to consumer electronics. The device's compliance with environmental and safety standards ensures its suitability for modern manufacturing processes. With its robust features and versatile applications, the MT47R512M4EB-25E:C is a reliable and efficient solution for demanding memory requirements.