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MT49H16M36BM-18:B
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MT49H16M36BM-18:B Description
MT49H16M36BM-18:B Description
The MT49H16M36BM-18:B is a high-performance 576Mbit (16M x 36) volatile DRAM module from Micron Technology Inc., designed for applications requiring high-speed parallel data access. Operating at a clock frequency of 533 MHz with an access time of 15 ns, this DRAM delivers efficient data throughput for demanding embedded and industrial systems. It features a 1.7V to 1.9V supply voltage, ensuring low power consumption while maintaining robust performance across an operating temperature range of 0°C to 95°C (TC). The device is packaged in a 144-ball UBGA (Bulk), making it suitable for space-constrained designs.
MT49H16M36BM-18:B Features
- Memory Organization: 16M x 36 configuration, offering a balanced blend of density and bandwidth.
- High-Speed Performance: 533 MHz clock frequency and 15 ns access time for rapid data processing.
- Low Power Operation: 1.7V–1.9V supply range optimizes energy efficiency.
- Robust Packaging: 144-ball UBGA for reliable surface-mount integration.
- Industrial-Grade Durability: Operates reliably in harsh environments (0°C to 95°C).
- Compliance: ROHS3 compliant and REACH unaffected, meeting global environmental standards.
MT49H16M36BM-18:B Applications
This DRAM is ideal for:
- Networking Equipment: Routers, switches, and base stations requiring high-speed data buffering.
- Industrial Automation: PLCs, motor controllers, and robotics demanding reliable memory performance.
- Embedded Systems: Medical devices, avionics, and automotive systems where low power and high reliability are critical.
- Telecommunications: 5G infrastructure and signal processing units leveraging parallel data access.
Conclusion of MT49H16M36BM-18:B
The MT49H16M36BM-18:B stands out for its high-speed parallel interface, low-voltage operation, and industrial-grade reliability, making it a preferred choice for advanced embedded and communication systems. While marked as obsolete, its performance metrics and Micron’s quality assurance ensure it remains viable for legacy or long-lifecycle designs. Engineers seeking a balance of speed, power efficiency, and ruggedness will find this DRAM module a compelling solution.



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