Micron Technology

MT49H32M18CBM-18:B  

Memory ICs Products

MT49H32M18CBM-18:B Description

The MT49H32M18CBM-18:B is a high-performance DRAM memory IC chip manufactured by Micron Technology Inc. This chip features a memory size of 576 Mbit, organized as 32M x 18, and operates with a clock frequency of 533 MHz. It is designed for parallel memory interface applications and is housed in a surface-mount 144UBGA package, making it suitable for compact and high-density electronic designs. The chip operates within a supply voltage range of 1.7V to 1.9V and has an access time of 15 ns, ensuring fast data retrieval. It is rated for an operating temperature range of 0°C to 95°C (TC) and has a moisture sensitivity level (MSL) of 3 (168 hours), making it suitable for a variety of environmental conditions. The MT49H32M18CBM-18:B is REACH unaffected and ROHS3 compliant, adhering to stringent environmental and safety standards.

MT49H32M18CBM-18:B Features

• Memory Size and Organization: The MT49H32M18CBM-18:B offers a substantial memory size of 576 Mbit, organized in a 32M x 18 configuration. This organization allows for efficient data storage and retrieval, making it ideal for applications requiring large data sets.
• High-Speed Performance: With a clock frequency of 533 MHz and an access time of 15 ns, this DRAM chip ensures rapid data processing and minimal latency, enhancing overall system performance.
• Volatile Memory: As a volatile memory type, the MT49H32M18CBM-18:B retains data only while power is supplied, which is beneficial for applications requiring frequent data updates and refreshes.
• Parallel Memory Interface: The parallel memory interface facilitates high-speed data transfer, making it suitable for systems that require quick and efficient data handling.
• Surface-Mount Technology: The surface-mount package type allows for compact and high-density PCB designs, optimizing space utilization in modern electronic systems.
• Environmental Compliance: The MT49H32M18CBM-18:B is REACH unaffected and ROHS3 compliant, ensuring it meets environmental and safety standards, making it suitable for a wide range of applications.
• Wide Operating Temperature Range: The chip operates within a temperature range of 0°C to 95°C (TC), making it suitable for both standard and rugged environments.
• Moisture Sensitivity Level: With an MSL of 3 (168 hours), the chip is protected against moisture, ensuring reliability in various environmental conditions.

MT49H32M18CBM-18:B Applications

The MT49H32M18CBM-18:B is ideal for a variety of applications that require high-speed, high-density memory solutions. Some specific use cases include:

• Networking Equipment: Ideal for routers, switches, and other networking devices that require fast data processing and storage.
• Telecommunications: Suitable for base stations and communication systems that need reliable and high-speed memory.
• Industrial Control Systems: Applicable in industrial automation and control systems where robust and efficient memory is crucial.
• Consumer Electronics: Used in high-end consumer electronics such as gaming consoles, smart TVs, and multimedia devices.
• Embedded Systems: Beneficial in embedded systems that require compact and high-performance memory solutions.

Conclusion of MT49H32M18CBM-18:B

The MT49H32M18CBM-18:B is a high-performance DRAM memory IC chip that offers a combination of large memory size, high-speed operation, and environmental compliance. Its 576 Mbit memory size and 32M x 18 organization provide substantial data storage capabilities, while its 533 MHz clock frequency and 15 ns access time ensure rapid data processing. The parallel memory interface and surface-mount package make it suitable for compact and high-density designs. Although the product is now obsolete, its unique features and performance benefits make it a valuable component for applications requiring reliable and efficient memory solutions.

MT49H32M18CBM-18:B Documents

Download datasheets and manufacturer documentation for MT49H32M18CBM-18:B

PCN Packaging :

Standard Pkg Label Chg 20/Feb/2019