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MT49H32M18SJ-25E:B

MT49H32M18SJ-25E:B Description

The MT49H32M18SJ-25E:B is a high-performance 576Mbit (32M x 18) volatile DRAM from Micron Technology Inc., designed for applications requiring high-speed data access and reliable memory performance. Operating at a 400 MHz clock frequency with a 15 ns access time, this parallel-interface DRAM delivers efficient data throughput for demanding embedded and industrial systems. Its 1.7V–1.9V supply voltage ensures low power consumption, while the 0°C to 95°C (TC) operating temperature range makes it suitable for harsh environments. Packaged in a 144FBGA tray, it is RoHS3 compliant and adheres to REACH Unaffected standards, though it is marked as Obsolete in Micron's product lineup.

MT49H32M18SJ-25E:B Features

• High-Speed Performance: 400 MHz clock frequency and 15 ns access time for rapid data processing.
• Large Memory Capacity: 32M x 18 organization (576Mbit) accommodates complex data storage needs.
• Low Power Operation: 1.7V–1.9V voltage range optimizes energy efficiency.
• Robust Design: Operates reliably in industrial temperatures (0°C to 95°C).
• Surface-Mount 144FBGA Package: Compact and suitable for space-constrained PCB designs.
• Compliance: Meets ROHS3 and REACH Unaffected environmental standards.
• Parallel Interface: Enables seamless integration with high-bandwidth systems.

MT49H32M18SJ-25E:B Applications

This DRAM is ideal for:

• Networking Equipment: Routers, switches, and base stations requiring high-speed buffering.
• Industrial Automation: PLCs, motor control, and real-time data logging systems.
• Embedded Computing: Medical devices, avionics, and automotive infotainment systems.
• Legacy System Upgrades: Suitable for retrofitting older designs due to its parallel interface.

Conclusion of MT49H32M18SJ-25E:B

The MT49H32M18SJ-25E:B offers a balance of speed, capacity, and power efficiency, making it a strong choice for legacy and industrial applications. While marked as Obsolete, its high reliability and performance ensure continued suitability for systems where parallel DRAM is preferred. Engineers should verify alternative solutions for long-term availability but can leverage this IC for robust, high-throughput memory needs.