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MT49H64M9CBM-25E:B

MT49H64M9CBM-25E:B Description

The MT49H64M9CBM-25E:B is a high-performance Dynamic Random Access Memory (DRAM) IC chip manufactured by Micron Technology Inc. This memory IC features a 576Mbit capacity organized as 64M x 9, providing substantial storage capabilities for various electronic systems. The memory operates with a clock frequency of 400 MHz, ensuring rapid data access and processing. It supports a parallel memory interface, which is ideal for applications requiring high-speed data transfer and efficient memory management.

The MT49H64M9CBM-25E:B is designed for surface mount technology (SMT), making it suitable for compact and high-density PCB designs. It operates within a voltage range of 1.7V to 1.9V, contributing to energy efficiency and compatibility with modern low-power systems. The memory chip is housed in a bulk package, which is both robust and cost-effective for mass production.

MT49H64M9CBM-25E:B Features

• Memory Organization: 64M x 9, offering a total memory size of 576Mbit.
• Clock Frequency: 400 MHz, enabling fast data processing and transfer.
• Access Time: 15 ns, ensuring quick data retrieval and reduced latency.
• Operating Temperature: 0°C to 95°C, making it suitable for a wide range of environmental conditions.
• Voltage - Supply: 1.7V to 1.9V, supporting low-power consumption and compatibility with modern systems.
• Memory Interface: Parallel, facilitating high-speed data transfer.
• Memory Type: Volatile DRAM, providing fast and reliable memory access.
• Package: Bulk, suitable for surface mount applications.
• Moisture Sensitivity Level (MSL): Level 3 (168 hours), ensuring reliability in various manufacturing environments.
• RoHS Status: ROHS3 Compliant, meeting environmental and regulatory standards.

MT49H64M9CBM-25E:B Applications

The MT49H64M9CBM-25E:B is ideal for a variety of applications where high-speed, high-capacity memory is required. Some specific use cases include:

• Networking Equipment: Routers, switches, and other networking devices that require fast data processing and storage.
• Telecommunications: Base stations and communication systems that need reliable and efficient memory solutions.
• Industrial Control Systems: PLCs, SCADA systems, and other industrial applications that demand robust and high-performance memory.
• Consumer Electronics: High-end gaming consoles, multimedia devices, and other consumer electronics that benefit from fast and reliable memory.

Conclusion of MT49H64M9CBM-25E:B

The MT49H64M9CBM-25E:B DRAM IC chip from Micron Technology Inc. offers a combination of high capacity, fast access times, and robust performance, making it a valuable component for a wide range of applications. Its 576Mbit capacity, 400 MHz clock frequency, and 15 ns access time ensure efficient data processing and storage. The parallel memory interface and surface mount packaging make it suitable for modern, high-density PCB designs.

Despite being marked as obsolete, the MT49H64M9CBM-25E:B remains a reliable choice for applications requiring high-speed, high-capacity memory. Its compliance with RoHS3 standards and moisture sensitivity level 3 ensures it meets environmental and manufacturing requirements. For systems that demand fast and efficient memory solutions, the MT49H64M9CBM-25E:B is an excellent choice.