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MT49H8M36BM-TI:B
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MT49H8M36BM-TI:B Description
MT49H8M36BM-TI:B Description
The MT49H8M36BM-TI:B is a high-performance 288Mbit (8M x 36) volatile DRAM from Micron Technology, designed for applications requiring high-speed parallel data access. Operating within a 1.7V to 1.9V supply range and rated for 0°C to 95°C (TC), this 144-ball UBGA packaged device offers robust performance in demanding environments. Although marked as Obsolete, it remains a reliable choice for legacy systems due to its parallel memory interface and 3A991B2A ECCN compliance, ensuring suitability for export-controlled applications.
MT49H8M36BM-TI:B Features
- Memory Organization: 8M x 36 configuration, ideal for wide data bus systems.
- Low Power Consumption: Optimized for 1.7V–1.9V operation, reducing energy use in embedded systems.
- High-Speed Parallel Interface: Enables rapid data transfer for real-time processing.
- Industrial Temperature Range: Supports 0°C to 95°C (TC), making it suitable for harsh environments.
- RoHS3 Compliant & REACH Unaffected: Meets environmental and regulatory standards.
- Moisture Sensitivity Level (MSL) 3: Requires careful handling but ensures reliability post-reflow.
MT49H8M36BM-TI:B Applications
This DRAM is tailored for legacy and specialized systems, including:
- Networking Equipment: Routers and switches requiring high-bandwidth memory.
- Industrial Automation: PLCs and control systems needing reliable volatile memory.
- Military/Aerospace: Legacy avionics and defense systems with strict compliance needs.
- Medical Devices: Embedded systems where low-voltage operation is critical.
Conclusion of MT49H8M36BM-TI:B
The MT49H8M36BM-TI:B excels in applications demanding parallel memory access, low-voltage operation, and industrial-grade reliability. While obsolete, its 288Mbit capacity and 36-bit bus width make it a viable option for upgrading or maintaining legacy hardware. Engineers should consider alternative modern solutions for new designs but can leverage this DRAM’s proven performance for specific use cases.



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