Micron Technology_MT49H8M36BM-TI:B
Micron Technology_MT49H8M36BM-TI:B

Micron Technology
MT49H8M36BM-TI:B  
Memory ICs Products

Micron Technology
MT49H8M36BM-TI:B
774-MT49H8M36BM-TI:B
Ersa
Micron Technology-MT49H8M36BM-TI:B-datasheets-12042873.pdf
IC DRAM 288MBIT PARALLEL 144UBGA
In Stock : 1129

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MT49H8M36BM-TI:B Description

MT49H8M36BM-TI:B Description

The MT49H8M36BM-TI:B is a high-performance 288Mbit (8M x 36) volatile DRAM from Micron Technology, designed for applications requiring high-speed parallel data access. Operating within a 1.7V to 1.9V supply range and rated for 0°C to 95°C (TC), this 144-ball UBGA packaged device offers robust performance in demanding environments. Although marked as Obsolete, it remains a reliable choice for legacy systems due to its parallel memory interface and 3A991B2A ECCN compliance, ensuring suitability for export-controlled applications.

MT49H8M36BM-TI:B Features

  • Memory Organization: 8M x 36 configuration, ideal for wide data bus systems.
  • Low Power Consumption: Optimized for 1.7V–1.9V operation, reducing energy use in embedded systems.
  • High-Speed Parallel Interface: Enables rapid data transfer for real-time processing.
  • Industrial Temperature Range: Supports 0°C to 95°C (TC), making it suitable for harsh environments.
  • RoHS3 Compliant & REACH Unaffected: Meets environmental and regulatory standards.
  • Moisture Sensitivity Level (MSL) 3: Requires careful handling but ensures reliability post-reflow.

MT49H8M36BM-TI:B Applications

This DRAM is tailored for legacy and specialized systems, including:

  • Networking Equipment: Routers and switches requiring high-bandwidth memory.
  • Industrial Automation: PLCs and control systems needing reliable volatile memory.
  • Military/Aerospace: Legacy avionics and defense systems with strict compliance needs.
  • Medical Devices: Embedded systems where low-voltage operation is critical.

Conclusion of MT49H8M36BM-TI:B

The MT49H8M36BM-TI:B excels in applications demanding parallel memory access, low-voltage operation, and industrial-grade reliability. While obsolete, its 288Mbit capacity and 36-bit bus width make it a viable option for upgrading or maintaining legacy hardware. Engineers should consider alternative modern solutions for new designs but can leverage this DRAM’s proven performance for specific use cases.

Tech Specifications

Operating Temperature
Memory Interface
ECCN
Memory Organization
Mounting Type
Memory Type
Product Status
Supplier Device Package
Series
Write Cycle Time - Word, Page
Memory Size
Package / Case
Technology
Voltage - Supply
REACH Status
Mfr
HTSUS
Package
Memory Format
RoHS Status
Base Product Number
Moisture Sensitivity Level (MSL)

MT49H8M36BM-TI:B Documents

Download datasheets and manufacturer documentation for MT49H8M36BM-TI:B

Ersa Tray Pkg Label Chgs 8/Oct/2020      
Ersa MT49H32M9, 16M18, 8M36      
Ersa Memory 24-May-2022       Tray 05-May-2022      

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