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MT52L256M64D2GN-107 WT:B TR

MT52L256M64D2GN-107 WT:B TR Description

The MT52L256M64D2GN-107 WT:B TR is a high-performance DRAM memory IC chip manufactured by Micron Technology Inc. This chip features a 16Gbit memory size organized as 256M x 64, providing substantial storage capacity for demanding applications. It operates at a clock frequency of 933 MHz, ensuring rapid data access and processing speeds. The memory type is volatile, meaning it requires a continuous power supply to retain data, which is typical for DRAM technology. The chip is designed for surface mount applications and comes in a 256FBGA package, making it suitable for compact and high-density PCB designs. The supply voltage is 1.2V, aligning with modern low-power requirements. The product is packaged in tape and reel (TR) format, facilitating automated assembly processes. Despite its obsolescence, the MT52L256M64D2GN-107 WT:B TR remains a reliable choice for specific legacy systems and applications that require its unique specifications.

MT52L256M64D2GN-107 WT:B TR Features

• High Capacity and Speed: With a memory size of 16Gbit and a clock frequency of 933 MHz, the MT52L256M64D2GN-107 WT:B TR offers high-speed data access and substantial storage capacity, making it ideal for applications requiring large amounts of temporary data storage and rapid processing.
• Low Power Consumption: The 1.2V supply voltage ensures low power consumption, which is crucial for energy-efficient designs and applications with limited power budgets.
• Surface Mount Technology (SMT): The surface mount mounting type allows for compact and high-density PCB layouts, which is essential for modern electronic devices where space is a premium.
• Moisture Sensitivity Level (MSL) 3: With an MSL rating of 3 (168 hours), the chip is suitable for environments with moderate moisture levels, ensuring reliability and longevity in various operating conditions.
• Compliance and Safety: The MT52L256M64D2GN-107 WT:B TR is REACH unaffected and RoHS3 compliant, meeting stringent environmental and safety standards, which is important for manufacturers adhering to regulatory requirements.
• Packaging: The tape and reel (TR) packaging format is ideal for automated assembly processes, enhancing manufacturing efficiency and reducing production costs.

MT52L256M64D2GN-107 WT:B TR Applications

The MT52L256M64D2GN-107 WT:B TR is well-suited for a variety of applications that require high-speed, high-capacity DRAM memory. Some specific use cases include:

• Networking Equipment: Ideal for routers, switches, and other networking devices that require fast data processing and large temporary storage for packet buffering and routing tables.
• Telecommunications: Suitable for base stations and other telecom infrastructure where rapid data access and high memory capacity are critical for efficient operation.
• Embedded Systems: Applicable in embedded systems that need substantial temporary storage for real-time data processing, such as industrial control systems and automotive electronics.
• Legacy Systems: Despite its obsolescence, the MT52L256M64D2GN-107 WT:B TR remains a viable option for maintaining and upgrading legacy systems that were originally designed with this component.

Conclusion of MT52L256M64D2GN-107 WT:B TR

The MT52L256M64D2GN-107 WT:B TR, manufactured by Micron Technology Inc., is a high-performance DRAM memory IC chip that offers a combination of high capacity, speed, and low power consumption. Its surface mount technology and compact 256FBGA package make it suitable for modern, space-constrained designs. Despite being obsolete, its unique specifications and compliance with environmental and safety standards make it a reliable choice for specific applications, particularly in networking, telecommunications, and embedded systems. For manufacturers maintaining legacy systems or requiring a specific DRAM solution, the MT52L256M64D2GN-107 WT:B TR remains a valuable component.