Micron Technology_MT53B512M32D2NP-053 WT:C TR
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Micron Technology
MT53B512M32D2NP-053 WT:C TR

774-MT53B512M32D2NP-053 WT:C TR
IC DRAM 16GBIT 1.866GHZ 200WFBGA

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Tech Specifications

Clock Frequency
1.866 GHz
Operating Temperature
-30°C ~ 85°C (TC)
Memory Interface
-
ECCN
EAR99
Memory Organization
512M x 32
Mounting Type
Surface Mount
Memory Type
Volatile
Product Status
Obsolete
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MT53B512M32D2NP-053 WT:C TR Description

MT53B512M32D2NP-053 WT:C TR Description

The MT53B512M32D2NP-053 WT:C TR is a high-performance memory IC designed by Micron Technology Inc., a leading provider of advanced semiconductor solutions. This IC features a 16Gbit DRAM memory size, organized as 512M x 32, and operates at a clock frequency of 1.866 GHz. It is packaged in a 200WFBGA format and comes in a surface-mount type, making it suitable for a wide range of electronic applications. The memory is volatile, meaning it requires power to retain data, and it operates at a supply voltage of 1.1V. The product is categorized under Memory ICs and is currently marked as obsolete, though it remains a robust option for specific legacy systems.

MT53B512M32D2NP-053 WT:C TR Features

  • Memory Organization: 512M x 32, providing a substantial memory capacity ideal for data-intensive applications.
  • Clock Frequency: 1.866 GHz, ensuring high-speed data processing and efficient performance.
  • Memory Type: Volatile DRAM, offering fast read/write speeds and dynamic memory management.
  • Supply Voltage: 1.1V, optimized for low power consumption and energy efficiency.
  • Package Type: 200WFBGA, with a surface-mount mounting type, suitable for compact and high-density PCB designs.
  • Moisture Sensitivity Level (MSL): Level 3 (168 Hours), ensuring reliability in various environmental conditions.
  • Compliance: ROHS3 compliant and REACH unaffected, meeting stringent environmental and safety standards.
  • ECCN: EAR99, indicating compliance with export regulations.
  • HTSUS: 8542.32.0036, facilitating accurate tariff classification for international trade.
  • Tape & Reel Packaging: Ensures efficient handling and assembly in automated manufacturing processes.

MT53B512M32D2NP-053 WT:C TR Applications

The MT53B512M32D2NP-053 WT:C TR is ideal for applications requiring high-speed, high-capacity memory solutions. Its 16Gbit DRAM capacity and 1.866 GHz clock frequency make it suitable for:

  • Networking Equipment: Routers, switches, and other network devices that require fast data processing and large memory capacity.
  • Telecommunications: Base stations and communication infrastructure that need reliable and high-speed memory.
  • Computing Systems: Servers and workstations that benefit from high-density memory modules.
  • Consumer Electronics: High-end gaming consoles and multimedia devices that require fast and efficient memory management.
  • Industrial Systems: Automation and control systems that demand robust and reliable memory solutions.

Conclusion of MT53B512M32D2NP-053 WT:C TR

The MT53B512M32D2NP-053 WT:C TR from Micron Technology Inc. stands out as a high-performance memory IC, offering a 16Gbit DRAM capacity and a clock frequency of 1.866 GHz. Its 512M x 32 memory organization and 1.1V supply voltage ensure efficient power usage and dynamic memory management. The 200WFBGA package and surface-mount type make it suitable for compact and high-density PCB designs, while its compliance with ROHS3 and REACH standards ensures environmental and safety reliability. Although marked as obsolete, this memory IC remains a valuable option for legacy systems and specific applications requiring high-speed, high-capacity memory solutions.

FAQ

What voltage specification is listed for MT53B512M32D2NP-053 WT:C TR?
The listed voltage-related specification for MT53B512M32D2NP-053 WT:C TR is 1.1V.
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