Micron Technology_MT53D1024M32D4NQ-053 WT:D
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Micron Technology
MT53D1024M32D4NQ-053 WT:D

774-MT53D1024M32D4NQ-053 WT:D
IC DRAM 32GBIT 1.866GHZ 200VFBGA

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Tech Specifications

Clock Frequency
1.866 GHz
HTS
EA
ECCN (US)
EAR99
PPAP
Unknown
Memory Type
Volatile
Product Status
Obsolete
Supplier Device Package
200-VFBGA (10x14.5)
Automotive
Unknown
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MT53D1024M32D4NQ-053 WT:D Description

MT53D1024M32D4NQ-053 WT:D Description

The MT53D1024M32D4NQ-053 WT:D is a high-performance DRAM memory IC chip manufactured by Micron Technology Inc. This 32Gbit memory device is organized as 1G x 32 and operates at a clock frequency of 1.866 GHz, making it suitable for demanding applications requiring high-speed data processing and storage. The chip is designed for surface-mount applications and comes in a 200-ball VFBGA package, ensuring robustness and reliability in various electronic systems.

MT53D1024M32D4NQ-053 WT:D Features

  • Memory Organization: The MT53D1024M32D4NQ-053 WT:D features a 1G x 32 memory organization, providing a total memory capacity of 32Gbit. This configuration allows for efficient data storage and retrieval, making it ideal for applications requiring large memory arrays.
  • Clock Frequency: With a clock frequency of 1.866 GHz, this DRAM IC offers high-speed performance, enabling rapid data access and processing. This high-frequency operation is crucial for applications that demand quick response times and efficient data handling.
  • Volatile Memory: As a volatile memory type, the MT53D1024M32D4NQ-053 WT:D retains data only while power is supplied. This characteristic is advantageous for applications where data needs to be frequently updated and where power consumption is a critical consideration.
  • Supply Voltage: The chip operates at a supply voltage of 1.1V, ensuring low power consumption and compatibility with modern low-power systems. This feature is particularly beneficial for battery-operated devices and energy-efficient applications.
  • Surface Mount Technology: The surface-mount mounting type allows for compact and reliable integration into various electronic systems. This method reduces the overall footprint and enhances the durability of the device.
  • Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the MT53D1024M32D4NQ-053 WT:D is suitable for environments with moderate humidity levels, ensuring long-term reliability and performance.
  • Compliance and Standards: The MT53D1024M32D4NQ-053 WT:D is REACH unaffected and ROHS3 compliant, adhering to stringent environmental and safety regulations. This compliance ensures that the product is safe for use in various industries and applications.

MT53D1024M32D4NQ-053 WT:D Applications

The MT53D1024M32D4NQ-053 WT:D is well-suited for a variety of applications that require high-speed, high-capacity memory solutions. Some specific use cases include:

  • High-Performance Computing: Ideal for servers and high-performance computing systems where large amounts of data need to be processed quickly.
  • Networking Equipment: Suitable for routers, switches, and other networking devices that require fast data access and storage.
  • Consumer Electronics: Applicable in gaming consoles, high-end smartphones, and tablets where high-speed memory is essential for smooth performance.
  • Industrial Systems: Useful in industrial control systems and automation equipment that demand reliable and efficient memory solutions.

Conclusion of MT53D1024M32D4NQ-053 WT:D

The MT53D1024M32D4NQ-053 WT:D from Micron Technology Inc. is a versatile and high-performance DRAM IC chip designed to meet the demands of modern electronic systems. With its 32Gbit capacity, 1.866 GHz clock frequency, and low supply voltage, this device offers significant performance benefits over similar models. Its surface-mount design and compliance with environmental standards make it a reliable choice for a wide range of applications, from high-performance computing to consumer electronics. Despite being marked as obsolete, the MT53D1024M32D4NQ-053 WT:D remains a valuable component for systems that require robust and efficient memory solutions.

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