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MT53D1G64D8NZ-046 WT ES:E

MT53D1G64D8NZ-046 WT ES:E Description

The MT53D1G64D8NZ-046 WT ES:E is a high-performance DRAM memory IC chip manufactured by Micron Technology Inc. This device is designed to meet the demanding requirements of modern computing systems, offering a memory size of 64 Gbit with a memory organization of 1G x 64. It operates at a clock frequency of 2.133 GHz, providing rapid data access and transfer speeds essential for high-performance applications. The memory is volatile, meaning it requires a constant power supply to retain data, and it operates at a supply voltage of 1.1V, ensuring energy efficiency.

The MT53D1G64D8NZ-046 WT ES:E is packaged in a 376-pin Fine Ball Grid Array (FBGA) format, making it suitable for surface mount applications. It is classified under the ECCN code EAR99 and is REACH unaffected, ensuring compliance with international regulations. The product is available in a tray package and has a moisture sensitivity level (MSL) of 3, allowing for a storage period of 168 hours before assembly.

MT53D1G64D8NZ-046 WT ES:E Features

• High-Speed Performance: With a clock frequency of 2.133 GHz, the MT53D1G64D8NZ-046 WT ES:E ensures fast data processing and transfer, making it ideal for applications requiring high-speed memory access.
• Large Memory Capacity: The 64 Gbit memory size and 1G x 64 memory organization provide substantial storage capacity, suitable for handling large datasets and complex computations.
• Energy Efficiency: Operating at a supply voltage of 1.1V, this DRAM IC chip offers energy-efficient performance, reducing power consumption and heat generation.
• Surface Mount Compatibility: The surface mount mounting type and 376-pin FBGA package make it easy to integrate into compact and high-density electronic systems.
• Regulatory Compliance: Classified under ECCN code EAR99 and REACH unaffected, the MT53D1G64D8NZ-046 WT ES:E meets international regulatory standards, ensuring its suitability for global markets.
• Moisture Sensitivity Level: With an MSL of 3, the device can be stored for up to 168 hours before assembly, providing flexibility in manufacturing processes.

MT53D1G64D8NZ-046 WT ES:E Applications

The MT53D1G64D8NZ-046 WT ES:E is ideal for a wide range of high-performance computing applications, including:

• Servers and Data Centers: The high memory capacity and fast data access speeds make it suitable for server applications where large amounts of data need to be processed quickly.
• High-Performance Computing (HPC): Ideal for HPC systems that require rapid data processing and large memory storage to handle complex simulations and computations.
• Networking Equipment: Suitable for networking devices that need fast data transfer and large memory capacity to manage high-speed data traffic.
• Embedded Systems: The compact surface mount package and energy efficiency make it a good fit for embedded systems that require high performance in a small form factor.

Conclusion of MT53D1G64D8NZ-046 WT ES:E

The MT53D1G64D8NZ-046 WT ES:E is a high-performance DRAM memory IC chip that offers significant advantages over similar models. Its large memory capacity, high-speed performance, and energy efficiency make it an excellent choice for applications requiring fast data processing and large storage capacity. The surface mount compatibility and regulatory compliance further enhance its suitability for a wide range of electronic systems. Whether used in servers, high-performance computing systems, networking equipment, or embedded devices, the MT53D1G64D8NZ-046 WT ES:E provides reliable and efficient memory solutions for modern computing needs.