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MT53D384M64D4SB-046 XT ES:E

MT53D384M64D4SB-046 XT ES:E Description

The MT53D384M64D4SB-046 XT ES:E is a high-performance DRAM memory IC chip manufactured by Micron Technology Inc. This obsolete product is designed with a memory organization of 384M x 64, providing a total memory size of 24Gbit. It operates at a clock frequency of 2.133 GHz, ensuring fast data access and processing speeds. The device is powered by a supply voltage of 1.1V, making it energy-efficient and suitable for applications requiring low power consumption. Packaged in a tray format, it offers a moisture sensitivity level (MSL) of 1 (Unlimited), which means it is highly resistant to moisture and suitable for various environmental conditions. The memory format is DRAM, which is volatile, meaning it requires power to maintain stored data. This product is classified under HTSUS code 8542.32.0036 and has an ECCN of EAR99. It is important to note that the DigiKey programmability of this product has not been verified.

MT53D384M64D4SB-046 XT ES:E Features

• High Clock Frequency: The MT53D384M64D4SB-046 XT ES:E operates at a clock frequency of 2.133 GHz, providing rapid data access and processing capabilities. This high-speed performance is ideal for applications requiring quick data retrieval and manipulation.
• Large Memory Capacity: With a memory organization of 384M x 64, the device offers a substantial memory size of 24Gbit. This large capacity allows for the storage and handling of significant amounts of data, making it suitable for memory-intensive applications.
• Low Power Consumption: The device operates at a supply voltage of 1.1V, ensuring low power consumption. This feature is particularly beneficial for applications where energy efficiency is a priority, such as in portable devices or systems with limited power resources.
• Robust Packaging: The tray packaging format and moisture sensitivity level (MSL) of 1 (Unlimited) make the MT53D384M64D4SB-046 XT ES:E highly resistant to environmental factors. This robustness ensures reliable performance in various operating conditions.
• Volatility: As a DRAM device, the memory is volatile, meaning it requires a continuous power supply to retain data. This characteristic is advantageous for applications where data needs to be frequently updated and where power consumption can be managed effectively.

MT53D384M64D4SB-046 XT ES:E Applications

The MT53D384M64D4SB-046 XT ES:E is well-suited for a variety of applications due to its high-speed performance, large memory capacity, and low power consumption. Some specific use cases include:

• High-Performance Computing: The high clock frequency and large memory capacity make this device ideal for high-performance computing applications, such as data centers, servers, and supercomputers, where rapid data processing and storage are critical.
• Consumer Electronics: The low power consumption and robust packaging make it suitable for consumer electronics, such gaming as consoles, high-end laptops, and multimedia devices, where energy efficiency and reliability are essential.
• Industrial Systems: The moisture resistance and robust packaging ensure reliable performance in industrial environments, making it suitable for applications in manufacturing, automation, and control systems.
• Telecommunications: The high-speed data processing capabilities and large memory size are beneficial for telecommunications applications, such as routers, switches, and base stations, where efficient data handling and storage are required.

Conclusion of MT53D384M64D4SB-046 XT ES:E

The MT53D384M64D4SB-046 XT ES:E is a high-performance DRAM memory IC chip that offers significant advantages over similar models. Its high clock frequency, large memory capacity, and low power consumption make it an excellent choice for a wide range of applications, from high-performance computing to consumer electronics and industrial systems. The robust packaging and moisture resistance further enhance its reliability and suitability for various operating conditions. Despite being an obsolete product, the MT53D384M64D4SB-046 XT ES:E remains a valuable option for applications requiring high-speed, high-capacity memory solutions.