Micron Technology_MT53D512M32D2DS-046 WT ES:D
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Micron Technology
MT53D512M32D2DS-046 WT ES:D

774-MT53D512M32D2DS-046 WT ES:D
IC DRAM 16GBIT 2.133GHZ 200WFBGA

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Tech Specifications

Clock Frequency
2.133 GHz
Part Status Code
Obsolete
Tape & Reel Qty
2000
HTS
EA
Component Density
16Gb
I/O Voltage
0.6 VOLTS
ECCN (US)
EAR99
Number of Components
2
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MT53D512M32D2DS-046 WT ES:D Description

MT53D512M32D2DS-046 WT ES:D Description

The MT53D512M32D2DS-046 WT ES:D is a high-performance IC DRAM module designed for demanding applications requiring significant memory capacity and speed. Manufactured by Micron Technology Inc., this 16Gbit DRAM IC features a memory organization of 512M x 32 and operates at a clock frequency of 2.133 GHz. It is housed in a 200WFBGA package, suitable for surface mount applications, and is rated for a supply voltage of 1.1V. This module is ideal for applications that demand high-speed data processing and large memory storage, such as advanced computing systems and high-performance servers.

MT53D512M32D2DS-046 WT ES:D Features

  • High Memory Capacity: With a memory size of 16Gbit, the MT53D512M32D2DS-046 WT ES:D offers substantial storage capabilities, making it suitable for applications that require large amounts of data to be processed and stored quickly.
  • Fast Clock Frequency: Operating at a clock frequency of 2.133 GHz, this DRAM module ensures rapid data access and transfer rates, enhancing the overall performance of the system it is integrated into.
  • Volatile Memory: As a volatile memory type, the MT53D512M32D2DS-046 WT ES:D provides high-speed read and write capabilities, essential for real-time data processing and temporary storage needs.
  • Surface Mount Compatibility: The surface mount mounting type allows for efficient integration into modern circuit board designs, ensuring reliable and compact installations.
  • Low Supply Voltage: The 1.1V supply voltage requirement helps in reducing power consumption, making this module energy-efficient and suitable for systems with power constraints.
  • Moisture Sensitivity Level (MSL) 1: With an MSL rating of 1 (Unlimited), this module is highly resistant to moisture, ensuring long-term reliability and performance even in varying environmental conditions.
  • Tray Packaging: The tray packaging format ensures that the modules are handled and stored safely, reducing the risk of damage during transportation and handling.

MT53D512M32D2DS-046 WT ES:D Applications

The MT53D512M32D2DS-046 WT ES:D is well-suited for a variety of high-performance applications, including:

  • Advanced Computing Systems: Ideal for use in high-performance computing environments where large amounts of data need to be processed quickly and efficiently.
  • High-Performance Servers: Provides the necessary memory capacity and speed to support demanding server applications, ensuring fast data retrieval and processing.
  • Data Centers: Enhances the performance of data center operations by providing high-speed memory solutions that can handle large volumes of data.
  • Telecommunications: Suitable for telecom infrastructure applications that require fast and reliable memory to manage data traffic and communication protocols.
  • Industrial Control Systems: Can be used in industrial control systems where real-time data processing and high-speed memory access are critical for system performance.

Conclusion of MT53D512M32D2DS-046 WT ES:D

The MT53D512M32D2DS-046 WT ES:D is a robust and high-performance DRAM IC that offers significant memory capacity and speed, making it an excellent choice for applications requiring high-speed data processing and large memory storage. Its low supply voltage and surface mount compatibility ensure energy efficiency and ease of integration into modern systems. Despite being marked as obsolete, this module still holds value for legacy systems and specific applications where its unique features and performance benefits are required.

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