Micron Technology_MT53D512M32D2NP-046 WT:E
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Micron Technology
MT53D512M32D2NP-046 WT:E

774-MT53D512M32D2NP-046 WT:E
IC DRAM 16GBIT 2.133GHZ 200WFBGA

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Tech Specifications

Clock Frequency
2.133 GHz
Operating Temperature
-30°C ~ 85°C (TC)
Memory Interface
-
ECCN
OBSOLETE
Memory Organization
512M x 32
Mounting Type
Surface Mount
Memory Type
Volatile
Product Status
Obsolete
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MT53D512M32D2NP-046 WT:E Description

MT53D512M32D2NP-046 WT:E Description

The MT53D512M32D2NP-046 WT:E is a high-performance DRAM memory IC designed by Micron Technology Inc., a leading provider of advanced semiconductor solutions. This memory module is characterized by its 16 Gbit capacity, organized as 512M x 32, and operates at a clock frequency of 2.133 GHz. It is packaged in a 200-WFBGA format, making it suitable for surface mount applications. The memory is volatile, meaning it requires a constant power supply to retain data, and operates at a supply voltage of 1.1V. This IC is classified under the category of Memory ICs Products and is known for its robust performance and reliability in various electronic systems.

MT53D512M32D2NP-046 WT:E Features

  • High Capacity and Organization: The MT53D512M32D2NP-046 WT:E offers a substantial memory capacity of 16 Gbit, organized in a 512M x 32 configuration. This structure ensures efficient data handling and storage, making it ideal for applications requiring large data sets.
  • Fast Clock Frequency: With a clock frequency of 2.133 GHz, this DRAM IC provides high-speed data access and transfer rates, enhancing overall system performance.
  • Volatile Memory Type: As a volatile memory, it ensures data integrity during active system operations, making it suitable for real-time processing applications.
  • Surface Mount Compatibility: The surface mount mounting type ensures easy integration into compact and high-density electronic designs.
  • Low Supply Voltage: Operating at a supply voltage of 1.1V, this IC is energy-efficient, reducing power consumption and heat generation.
  • Moisture Sensitivity Level (MSL) 3: With an MSL of 3 (168 hours), the MT53D512M32D2NP-046 WT:E is suitable for environments with moderate humidity, ensuring reliability and longevity.
  • Compliance and Standards: The IC is REACH unaffected and ROHS3 compliant, meeting environmental and safety standards for electronics manufacturing.

MT53D512M32D2NP-046 WT:E Applications

The MT53D512M32D2NP-046 WT:E is well-suited for a variety of applications that demand high-speed, high-capacity memory solutions. Some specific use cases include:

  • High-Performance Computing: Ideal for servers and data centers requiring rapid data processing and storage.
  • Networking Equipment: Suitable for routers and switches that need efficient data handling and low latency.
  • Consumer Electronics: Applicable in gaming consoles and high-end multimedia devices where fast memory access is crucial.
  • Industrial Systems: Can be used in industrial control systems and automation equipment that require reliable and high-speed memory.

Conclusion of MT53D512M32D2NP-046 WT:E

The MT53D512M32D2NP-046 WT:E is a powerful DRAM IC that offers a combination of high capacity, fast clock frequency, and low power consumption. Its surface mount compatibility and compliance with industry standards make it a reliable choice for a wide range of applications. Despite being marked as obsolete, its technical specifications and performance benefits continue to make it a valuable component in various electronic systems.

FAQ

What package or case is MT53D512M32D2NP-046 WT:E available in?
MT53D512M32D2NP-046 WT:E is available in the 200-WFBGA package / case.
What voltage specification is listed for MT53D512M32D2NP-046 WT:E?
What is the mounting type of MT53D512M32D2NP-046 WT:E?
Is MT53D512M32D2NP-046 WT:E currently in stock?
What operating temperature range does MT53D512M32D2NP-046 WT:E support?
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