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MT53D512M64D4RQ-046 WT:E TR

MT53D512M64D4RQ-046 WT:E TR Description

The MT53D512M64D4RQ-046 WT:E TR is a high-performance, 32Gbit DRAM IC designed by Micron Technology Inc. This memory IC chip features a clock frequency of 2.133 GHz, providing robust performance for demanding applications. It is organized as 512M x 64, meaning it has 512 million rows with 64 bits per row. The memory is volatile, meaning it requires a continuous power supply to retain data, and operates at a supply voltage of 1.1V. The IC is packaged in a 556 WFBGA (Wide Fine Ball Grid Array) and is available in a Tape & Reel (TR) format, making it suitable for surface mount applications. This product is classified under HTSUS code 8542.32.0036 and has a moisture sensitivity level (MSL) of 3, allowing for a 168-hour exposure to ambient conditions before assembly. While the product is marked as obsolete, it remains a reliable choice for specific legacy systems and applications.

MT53D512M64D4RQ-046 WT:E TR Features

• High Clock Frequency: The 2.133 GHz clock frequency ensures rapid data access and transfer rates, making it ideal for high-speed computing environments.
• Large Memory Capacity: With a memory size of 32Gbit, this IC can handle substantial amounts of data, suitable for applications requiring large memory footprints.
• Volatile Memory Type: As a DRAM device, it offers fast read/write capabilities, essential for dynamic data processing.
• Low Supply Voltage: Operating at 1.1V, it provides energy-efficient performance, reducing power consumption and heat generation.
• Surface Mount Compatibility: The surface mount mounting type and 556 WFBGA package make it easy to integrate into compact and high-density PCB designs.
• Moisture Sensitivity Level 3: The MSL 3 rating ensures reliability and durability during the manufacturing process, allowing for up to 168 hours of exposure before assembly.
• Compliance and Safety: The product is REACH unaffected and ROHS3 compliant, adhering to stringent environmental and safety standards.
• Tape & Reel Packaging: The TR packaging format facilitates efficient handling and automated assembly processes.

MT53D512M64D4RQ-046 WT:E TR Applications

The MT53D512M64D4RQ-046 WT:E TR is well-suited for a variety of applications that demand high-speed, high-capacity memory solutions. Key applications include:

• High-Performance Computing: Ideal for servers and workstations requiring rapid data processing and large memory capacities.
• Networking Equipment: Suitable for routers and switches that need fast memory access to handle high data throughput.
• Telecommunications: Used in base stations and communication infrastructure for efficient data handling and processing.
• Industrial Control Systems: Provides reliable memory solutions for industrial automation and control systems that require robust performance.
• Legacy Systems: Despite its obsolete status, it remains a valuable component for maintaining and upgrading older systems that still rely on this specific memory architecture.

Conclusion of MT53D512M64D4RQ-046 WT:E TR

The MT53D512M64D4RQ-046 WT:E TR from Micron Technology Inc. is a high-performance DRAM IC that offers significant advantages in terms of speed, capacity, and efficiency. Its 2.133 GHz clock frequency and 32Gbit memory size make it a powerful solution for high-speed computing and data-intensive applications. The low supply voltage of 1.1V ensures energy efficiency, while the surface mount compatibility and TR packaging facilitate easy integration into modern PCB designs. Although marked as obsolete, this IC remains a reliable choice for specific legacy systems and applications where its unique features and performance benefits are still highly valued.