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MT53D768M64D8NZ-046 WT ES:E

MT53D768M64D8NZ-046 WT ES:E Description

The MT53D768M64D8NZ-046 WT ES:E is a high-performance DRAM memory IC chip manufactured by Micron Technology Inc. This 48Gbit memory module is designed for demanding applications requiring high-speed data processing and large memory capacity. The device features a clock frequency of 2.133 GHz, ensuring rapid data access and transfer rates. With a memory organization of 768M x 64, it offers a substantial memory size in a compact form factor. The MT53D768M64D8NZ-046 WT ES:E is packaged in a 376-pin Fine Ball Grid Array (FBGA) and is designed for surface mount applications, making it suitable for modern, space-constrained electronic designs. The memory type is volatile, and the supply voltage is 1.1V, which is optimized for low power consumption and high efficiency. This product is classified under ECCN EAR99 and is REACH unaffected, ensuring compliance with international regulations.

MT53D768M64D8NZ-046 WT ES:E Features

• High-Speed Performance: The MT53D768M64D8NZ-046 WT ES:E operates at a clock frequency of 2.133 GHz, providing fast data access and transfer capabilities essential for high-performance computing and data-intensive applications.
• Large Memory Capacity: With a memory size of 48Gbit organized as 768M x 64, this DRAM module offers significant storage capacity, making it ideal for applications requiring large datasets and complex computations.
• Low Power Consumption: The device operates at a supply voltage of 1.1V, which is optimized for low power consumption, making it suitable for energy-efficient designs.
• Surface Mount Technology: The surface mount mounting type ensures compatibility with modern printed circuit board (PCB) designs, enabling compact and reliable electronic systems.
• Compliance and Safety: Classified under ECCN EAR99 and REACH unaffected, the MT53D768M64D8NZ-046 WT ES:E meets international regulatory standards, ensuring compliance and safety in global markets.
• Advanced Packaging: The 376WFBGA package provides a robust and reliable solution for high-density memory integration, enhancing the overall performance and durability of the device.

MT53D768M64D8NZ-046 WT ES:E Applications

The MT53D768M64D8NZ-046 WT ES:E is well-suited for a variety of applications requiring high-speed, high-capacity memory solutions. Some specific use cases include:

• High-Performance Computing: Ideal for servers, workstations, and data centers where rapid data processing and large memory capacity are critical.
• Networking and Telecommunications: Suitable for network switches, routers, and base stations that require high-speed data transfer and storage.
• Graphics and Multimedia: Beneficial for graphics cards, multimedia processing units, and gaming consoles that demand fast access to large datasets.
• Industrial Automation: Applicable in industrial control systems and automation equipment where reliable and high-speed memory is essential.
• Advanced Automotive Systems: Suitable for automotive infotainment systems and advanced driver-assistance systems (ADAS) that require robust and efficient memory solutions.

Conclusion of MT53D768M64D8NZ-046 WT ES:E

The MT53D768M64D8NZ-046 WT ES:E from Micron Technology Inc. is a high-performance DRAM memory IC chip that offers significant advantages over similar models. Its high-speed operation, large memory capacity, and low power consumption make it an ideal choice for a wide range of applications. The advanced packaging and compliance with international regulations ensure reliability and safety in modern electronic designs. While the product status indicates it is not recommended for new designs, the MT53D768M64D8NZ-046 WT ES:E remains a powerful solution for existing systems requiring high-performance memory solutions.