The MT53E128M32D2DS-046 AAT:A is a high-performance DRAM memory IC designed by Micron Technology Inc., a leading provider of advanced semiconductor solutions. This 4Gbit memory device operates at a clock frequency of 2.133 GHz, ensuring rapid data transfer and processing capabilities. The memory is organized as 128M x 32, making it highly efficient for applications requiring large data sets and high-speed access. The MT53E128M32D2DS-046 AAT:A is packaged in a 200-ball fine-pitch BGA (200WFBGA) and is designed for surface-mount applications, providing a compact and reliable solution for modern electronic systems.
The MT53E128M32D2DS-046 AAT:A is ideal for a wide range of applications, particularly those in the automotive sector. Its high-speed performance and automotive grade certification make it suitable for advanced driver-assistance systems (ADAS), infotainment systems, and other automotive electronics. Additionally, its low power consumption and compact design make it a valuable component for embedded systems, industrial controls, and IoT devices. The MT53E128M32D2DS-046 AAT:A is also well-suited for applications requiring high-speed data processing and large memory capacity, such as high-performance computing and data centers.
The MT53E128M32D2DS-046 AAT:A by Micron Technology Inc. is high a-performance DRAM memory IC that offers a combination of speed, reliability, and energy efficiency. Its automotive grade certification and compliance with environmental regulations make it a versatile and reliable choice for a variety of applications. Whether used in automotive electronics, embedded systems, or high-performance computing, the MT53E128M32D2DS-046 AAT:A provides the performance and reliability needed to meet the demands of modern electronic systems.
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