Micron Technology_MT53E1G32D2FW-046 IT:B TR
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Micron Technology
MT53E1G32D2FW-046 IT:B TR

774-MT53E1G32D2FW-046 IT:B TR
PDF Datasheet
LPDDR4 32G 1GX32 FBGA DDP
4 Weeks

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Tech Specifications

Clock Frequency
2.133 GHz
Operating Temperature
-40°C ~ 95°C (TC)
Memory Interface
Parallel
HTS
EA
ECCN (US)
EAR99
Memory Organization
1G x 32
Mounting Type
Surface Mount
Memory Type
Volatile
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MT53E1G32D2FW-046 IT:B TR Description

MT53E1G32D2FW-046 IT:B TR Description

The MT53E1G32D2FW-046 IT:B TR is a high-performance, low-power DDR4 memory module designed by Micron Technology Inc. This module is engineered to deliver exceptional speed and efficiency, making it ideal for a wide range of applications that demand high data throughput and low power consumption. With a clock frequency of 2.133 GHz and an access time of 3.5 ns, the MT53E1G32D2FW-046 IT:B TR ensures rapid data retrieval and processing. The memory is organized as 1G x 32, providing a total memory size of 32 Gbit, which is suitable for systems requiring substantial memory capacity.

This DRAM module features a parallel memory interface, which allows for efficient data transfer and communication with other system components. The module operates within a supply voltage range of 1.06V to 1.17V, contributing to its low-power design. The write cycle time for words and pages is 18 ns, ensuring quick data write operations. The MT53E1G32D2FW-046 IT:B TR is available in a surface-mount package, specifically in a tape & reel (TR) format, which is ideal for automated assembly processes.

MT53E1G32D2FW-046 IT:B TR Features

  • High-Speed Performance: With a clock frequency of 2.133 GHz and an access time of 3.5 ns, the MT53E1G32D2FW-046 IT:B TR delivers rapid data access and processing capabilities.
  • Large Memory Capacity: The 1G x 32 memory organization provides a total memory size of 32 Gbit, making it suitable for applications requiring significant memory resources.
  • Low-Power Design: The module operates within a supply voltage range of 1.06V to 1.17V, ensuring energy efficiency and reduced power consumption.
  • Fast Write Operations: The write cycle time of 18 ns for words and pages ensures quick data write operations, enhancing overall system performance.
  • Surface-Mount Packaging: The surface-mount package, specifically in a tape & reel (TR) format, is ideal for automated assembly processes, ensuring ease of integration into modern manufacturing workflows.
  • Parallel Memory Interface: The parallel memory interface allows for efficient data transfer and communication with other system components.
  • Volatile Memory: The module is a DRAM, which means it provides fast, volatile memory storage that is ideal for temporary data storage and high-speed processing.
  • Active Product Status: The MT53E1G32D2FW-046 IT:B TR is an active product, ensuring availability and support for ongoing projects.

MT53E1G32D2FW-046 IT:B TR Applications

The MT53E1G32D2FW-046 IT:B TR is well-suited for a variety of applications that demand high-speed, low-power memory solutions. Some specific use cases include:

  • Mobile Devices: The low-power design and high-speed performance make it ideal for smartphones, tablets, and other mobile devices where battery life and performance are critical.
  • Embedded Systems: The module's compact size and surface-mount packaging make it suitable for embedded systems in automotive, industrial, and IoT applications.
  • Consumer Electronics: The MT53E1G32D2FW-046 IT:B TR can be used in consumer electronics such as smart TVs, gaming consoles, and digital cameras, where fast data processing and low power consumption are essential.
  • Networking Equipment: The high-speed memory capabilities are beneficial for routers, switches, and other networking equipment that require rapid data handling and low latency.
  • Wearable Technology: The module's small form factor and low power consumption make it ideal for wearable devices that require efficient memory solutions without compromising performance.

Conclusion of MT53E1G32D2FW-046 IT:B TR

The MT53E1G32D2FW-046 IT:B TR from Micron Technology Inc. is a high-performance, low-power DDR4 memory module that offers significant advantages over similar models. Its high-speed performance, large memory capacity, and low-power design make it an ideal choice for applications in mobile devices, embedded systems, consumer electronics, networking equipment, and wearable technology. The module's surface-mount packaging and parallel memory interface ensure ease of integration and efficient data transfer. With its active product status and support from Micron Technology, the MT53E1G32D2FW-046 IT:B TR is a reliable and efficient memory solution for modern electronic systems.

FAQ

What voltage specification is listed for MT53E1G32D2FW-046 IT:B TR?
The listed voltage-related specification for MT53E1G32D2FW-046 IT:B TR is 1.06V ~ 1.17V.
What is MT53E1G32D2FW-046 IT:B TR?
Does MT53E1G32D2FW-046 IT:B TR have quantity-based pricing?
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