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Micron Technology

MT53E256M32D2DS-046 WT:B

Name: MT53E256M32D2DS-046 WT:B
Brand: Micron Technology
SKU: 774-MT53E256M32D2DS-046 WT:B
Price: 11.71543 USD
Availability: InStock

Manufacturer:

Micron Technology

ERSA Part #:

774-MT53E256M32D2DS-046 WT:B

Datasheet:

PDF Datasheet

Description:

IC DRAM 8GBIT 2.133GHZ 200WFBGA

RoHS Status:

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Tech Specifications

Clock Frequency

2.133 GHz

Part Status Code

Production

Component Density

8Gb

Number of Components

PPAP

Memory Type

Volatile

Product Status

Obsolete

Automotive

MT53E256M32D2DS-046 WT:B Description

Micron Technology | LPDDR4X DRAM

MT53E256M32D2DS-046 WT:B

8Gb LPDDR4X DRAM | 256M x32 | 4266 Mbps | Wide Temperature

✔️ Wide Temp: -25°C to +85°C ⚡ 0.6V VDD2 / 1.1V VDD1

BRAND

Micron

LPDDR4X Series

8Gb
Density

256M x32
Organization

4266
Mbps (Max)

0.6/1.1V
VDDQ/VDD2

200
FBGA Pins

Product Overview

The Micron MT53E256M32D2DS-046 WT:B is a high-performance 8Gb LPDDR4X DRAM organized as 256M words x 32 bits. Operating at ultra-low voltages (0.6V for I/O, 1.1V for core), it delivers up to 4266 Mbps data rate per pin, providing a total bandwidth of 17.0 GB/s (x32 @ 4266 MT/s). The “-046” timing parameter indicates a tCK of 0.46875 ns (2133 MHz clock / 4266 Mbps), making it ideal for power‑sensitive, high‑bandwidth applications such as smartphones, automotive infotainment, industrial SBCs, and edge AI devices.

The WT:B suffix designates wide temperature operation (-25°C to +85°C) with lead‑free, halogen‑free “:B” die revision. Micron’s LPDDR4X features on‑die ECC, deep power‑down modes, and clock stop capability, enabling extended battery life and reliable operation in harsh environments. This device is fully JEDEC compliant (JESD209-4B).

📊 Technical Specifications

Density / Organization	8Gb (256M x32, 2-channel, 2x 16-bit sub-channels)
Data Rate / Speed Grade	4266 Mbps (tCK = 0.46875ns, CL=36, tRCD=36, tRP=36)
Peak Bandwidth	17.0 GB/s (32-bit @ 4266 MT/s)
Supply Voltage	VDD1 = 1.70V – 1.95V (1.8V typ); VDD2 = 1.06V – 1.17V (1.1V); VDDQ = 0.57V – 0.65V (0.6V)
Operating Temperature	Wide Temperature (WT): -25°C to +85°C (case)
Storage Temperature	-40°C to +95°C
Package	200-ball FBGA (12.0×12.5×1.0 mm, 0.5mm pitch) – D2DS package code
Row / Column Addressing	16K rows, 1K columns, 4 banks per channel, 4 bank groups
Refresh	8K cycles, 32ms (0°C to 85°C) / 16ms (85°C to 95°C)
Low Power Features	Deep power-down (DPD), clock stop, partial array self-refresh (PASR)
On-die ECC	Supported (SEC-DED for array protection)
RoHS / Halogen Free	Yes – “:B” revision compliant
Qualification	Wide temperature industrial, AEC-Q100 Grade 3 option available

✨ Key Features

✅ Ultra-low Power 0.6V I/O – reduces active and standby power by 20% vs LPDDR4
✅ High Bandwidth 4266 Mbps – 17 GB/s for graphics, AI, and real-time data streaming
✅ Wide Temperature Range – -25°C to +85°C, suitable for outdoor, automotive, and industrial control
✅ Dual‑channel Architecture – two independent 16-bit sub-channels improve concurrency
✅ Advanced Power Management – dynamic voltage scaling, temperature-compensated refresh
✅ On-die ECC & Write CRC – enhanced data integrity for mission-critical systems
✅ Programmable Driving Strength – output impedance matching for signal integrity
✅ JEDEC Standard Package – 200‑ball FBGA, pin‑compatible with other LPDDR4X densities
✅ Long-term Availability – Micron’s industrial commitment supports 10+ years of production

🎯 Target Applications:

Smartphones & tablets, automotive infotainment & cluster, industrial single-board computers, edge AI accelerators, portable medical devices, networking line cards, and military embedded systems.

📦 Ordering Information & Part Number Decoder

Orderable Part Number	Speed / Temp	Package	Description
MT53E256M32D2DS-046 WT:B	4266 Mbps / -25°C to +85°C	200‑FBGA	8Gb LPDDR4X, wide temp, :B die
MT53E256M32D2DS-046 AIT:B	4266 Mbps / -40°C to +95°C	200‑FBGA	Automotive Grade 2 (AEC‑Q100)
MT53E512M32D2DS-046 WT:B	4266 Mbps / -25°C to +85°C	200‑FBGA	16Gb version, same family
MT53E256M32D2DS-046 WT:B TR	4266 Mbps / -25°C to +85°C	200‑FBGA	Tape & Reel (2000 pcs/reel)

🔍 Part Number Breakdown (MT53E256M32D2DS-046 WT:B):
• MT53E – Micron LPDDR4X (53E = LPDDR4X family)
• 256M32 – 256M x 32 = 8Gb density
• D2DS – Package code: D2DS = 200-ball FBGA, 12.0x12.5mm, 0.5mm pitch
• -046 – Speed bin: 4266 Mbps (tCK=0.46875ns, CL=36)
• WT – Wide Temperature (-25°C to +85°C)
• :B – Die revision B, lead‑free / halogen‑free

⚡ Power & Thermal Performance

Active Power (Typical)

IDD0 (operating): ~6.5 mA/MHz per byte

IDD2P (precharge power-down): <0.5 mA

IDD6 (deep power-down): <5 µA

Thermal Parameters

θ_JA (still air): 28°C/W

θ_JC (case to junction): 6.5°C/W

Max T_case: 85°C (WT grade)

Signal Integrity

ODT values: 40Ω, 60Ω, 120Ω

VREF training, RDQS, write leveling

Internal VREF generation

📄 Technical Resources

Micron LPDDR4X datasheet (MT53E family)
Application note: LPDDR4X system integration and PCB layout
IBIS models and simulation support (available under NDA)
Thermal simulation and derating curves

🔄 Compatibility & Migration

Pin‑compatible with 4Gb, 8Gb, and 16Gb LPDDR4X in same package
Backward compatible with LPDDR4 controllers (voltage adaptation required)
Supported by all major SoCs (MediaTek, Qualcomm, NXP, TI, Renesas)

FAQ

This device is an 8 Gbit LPDDR4/LPDDR4X SDRAM organized as 256M words × 32 bits (256M x 32). It supports dual‑channel operation with a 32‑bit I/O width.