Micron Technology_MT53E2G32D8QD-046 WT:E TR
Micron Technology_MT53E2G32D8QD-046 WT:E TR
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Micron Technology
MT53E2G32D8QD-046 WT:E TR

774-MT53E2G32D8QD-046 WT:E TR
IC DRAM 64GBIT 2.133GHZ FBGA

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Tech Specifications

Clock Frequency
2.133 GHz
Operating Temperature
-30°C ~ 85°C (TC)
Memory Interface
-
ECCN
OBSOLETE
Memory Organization
2G x 32
Memory Type
Volatile
Product Status
Obsolete
Series
-
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MT53E2G32D8QD-046 WT:E TR Description

MT53E2G32D8QD-046 WT:E TR Description

The MT53E2G32D8QD-046 WT:E TR is a high-performance, 64Gbit DRAM memory IC chip manufactured by Micron Technology Inc. This device is designed to offer robust performance and reliability, making it suitable for a variety of demanding applications. The memory is organized as 2G x 32, providing a large capacity and high bandwidth for data-intensive operations. With a clock frequency of 2.133 GHz, this DRAM chip ensures fast data access and processing speeds, essential for modern computing environments.

MT53E2G32D8QD-046 WT:E TR Features

  • Memory Organization: The MT53E2G32D8QD-046 WT:E TR features a 2G x 32 memory organization, providing a total memory size of 64Gbit. This configuration is ideal for applications requiring large memory capacity and high data throughput.
  • Clock Frequency: Operating at a clock frequency of 2.133 GHz, this DRAM chip ensures rapid data access and processing, making it suitable for high-performance computing and data-intensive applications.
  • Voltage - Supply: The device operates at a supply voltage of 1.1V, which helps in reducing power consumption and heat generation, contributing to overall system efficiency.
  • Package Type: The MT53E2G32D8QD-046 WT:E TR is packaged in a Tape & Reel (TR) format, which is ideal for automated assembly processes and ensures high reliability and ease of integration.
  • Memory Type: This DRAM chip is volatile, meaning it retains data only while power is supplied. This characteristic is advantageous for applications requiring fast read/write operations and dynamic data handling.
  • Compatibility and Integration: The MT53E2G32D8QD-046 WT:E TR is designed to be compatible with a wide range of systems and architectures, ensuring seamless integration into existing and new designs.

MT53E2G32D8QD-046 WT:E TR Applications

The MT53E2G32D8QD-046 WT:E TR is well-suited for a variety of applications, including but not limited to:

  • High-Performance Computing: Ideal for servers and workstations that require large amounts of memory and fast data processing capabilities.
  • Data Centers: Provides the necessary memory capacity and speed for data-intensive operations, ensuring efficient data handling and processing.
  • Networking Equipment: Suitable for routers and switches where high-speed data transfer and large memory capacity are critical.
  • Telecommunications: Can be used in base stations and other telecommunication equipment that require reliable and high-performance memory solutions.
  • Industrial Automation: Ideal for industrial control systems and automation equipment that require robust and efficient memory solutions.

Conclusion of MT53E2G32D8QD-046 WT:E TR

The MT53E2G32D8QD-046 WT:E TR is a high-performance DRAM memory IC chip that offers significant advantages over similar models. With its large memory capacity, high clock frequency, and efficient power consumption, this device is well-suited for a wide range of applications. The 2G x 32 memory organization and 2.133 GHz clock frequency ensure fast data access and processing, making it ideal for high-performance computing, data centers, networking equipment, telecommunications, and industrial automation. Despite being marked as obsolete, the MT53E2G32D8QD-046 WT:E TR remains a reliable and efficient memory solution for applications requiring robust performance and large memory capacity.

FAQ

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