Micron Technology_MT53E384M32D2DS-046 AIT:E TR
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Micron Technology
MT53E384M32D2DS-046 AIT:E TR

774-MT53E384M32D2DS-046 AIT:E TR
IC DRAM 12GBIT 2.133GHZ 200WFBGA

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Tech Specifications

Clock Frequency
2.133 GHz
Memory Type
Volatile
Product Status
Obsolete
Supplier Device Package
200-WFBGA (10x14.5)
Package / Case
200-WFBGA
Technology
SDRAM - Mobile LPDDR4
Voltage - Supply
1.1V
REACH Status
REACH Unaffected
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MT53E384M32D2DS-046 AIT:E TR Description

MT53E384M32D2DS-046 AIT:E TR Description

The MT53E384M32D2DS-046 AIT:E TR is a high-performance DRAM memory IC chip designed by Micron Technology Inc. This 12Gbit memory module operates at a clock frequency of 2.133 GHz, offering robust performance for demanding applications. The memory is organized as 384M x 32, providing a versatile and efficient memory structure. This chip is designed for surface mount applications and comes in a 200WFBGA package, ensuring compatibility with modern electronic systems. The memory is volatile, meaning it requires a continuous power supply to retain data, and operates at a supply voltage of 1.1V. The MT53E384M32D2DS-046 AIT:E TR is classified as an automotive-grade component, ensuring reliability and durability in harsh environments. It is also REACH unaffected and RoHS3 compliant, meeting stringent environmental and safety standards. The product is packaged in tape & reel (TR) format, facilitating efficient handling and assembly processes.

MT53E384M32D2DS-046 AIT:E TR Features

  • High Clock Frequency: Operates at 2.133 GHz, ensuring fast data access and processing speeds.
  • Volatile Memory: Retains data only when powered, suitable for applications requiring dynamic memory.
  • Automotive Grade: Designed to withstand the rigorous conditions of automotive environments.
  • Low Supply Voltage: Operates at 1.1V, contributing to energy efficiency and reduced power consumption.
  • Moisture Sensitivity Level: MSL 3 (168 Hours), ensuring reliability in humid conditions.
  • Compliance: REACH unaffected and RoHS3 compliant, meeting environmental and safety standards.
  • Packaging: Supplied in tape & reel (TR) format, facilitating automated assembly processes.
  • Memory Organization: 384M x 32 configuration, providing a balanced memory structure for efficient data handling.

MT53E384M32D2DS-046 AIT:E TR Applications

The MT53E384M32D2DS-046 AIT:E TR is ideal for applications requiring high-speed, reliable memory solutions. Its automotive-grade classification makes it particularly suitable for:

  • Automotive Infotainment Systems: Provides fast and reliable memory for advanced infotainment systems, ensuring seamless user experiences.
  • Advanced Driver Assistance Systems (ADAS): Supports real-time data processing for ADAS, contributing to enhanced safety and performance.
  • Industrial Control Systems: Offers robust memory solutions for industrial applications requiring high reliability and performance.
  • Embedded Systems: Suitable for embedded systems where fast data access and low power consumption are critical.

Conclusion of MT53E384M32D2DS-046 AIT:E TR

The MT53E384M32D2DS-046 AIT:E TR from Micron Technology Inc. is a high-performance DRAM memory IC chip designed for demanding applications. Its high clock frequency, automotive-grade durability, and compliance with environmental standards make it a reliable choice for modern electronic systems. Although the product is now obsolete, it remains a benchmark for performance and reliability in its category. For applications requiring fast, efficient, and durable memory solutions, the MT53E384M32D2DS-046 AIT:E TR is an excellent choice.

FAQ

What package or case is MT53E384M32D2DS-046 AIT:E TR available in?
MT53E384M32D2DS-046 AIT:E TR is available in the 200-WFBGA package / case.
What operating temperature range does MT53E384M32D2DS-046 AIT:E TR support?
What voltage specification is listed for MT53E384M32D2DS-046 AIT:E TR?
What is MT53E384M32D2DS-046 AIT:E TR?
What is the mounting type of MT53E384M32D2DS-046 AIT:E TR?
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