Micron Technology_MT53E384M32D2FW-046 AAT:E
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Micron Technology
MT53E384M32D2FW-046 AAT:E

774-MT53E384M32D2FW-046 AAT:E
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IC DRAM 12GBIT PAR 200TFBGA

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Tech Specifications

Clock Frequency
1.066 GHz
Operating Temperature
-40°C ~ 105°C (TA)
Memory Interface
Parallel
ECCN
OBSOLETE
Memory Organization
384M x 32
Mounting Type
Surface Mount
Memory Type
Volatile
Product Status
Obsolete
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MT53E384M32D2FW-046 AAT:E Description

MT53E384M32D2FW-046 AAT:E Description

The MT53E384M32D2FW-046 AAT:E is a high-performance DRAM memory IC chip manufactured by Micron Technology Inc. This chip is designed to provide robust and efficient memory solutions for a variety of applications requiring high-speed data processing and storage. With a memory organization of 384M x 32, the MT53E384M32D2FW-046 AAT:E offers a total memory size of 12 Gbit, making it suitable for demanding applications that require large data sets and fast access times.

MT53E384M32D2FW-046 AAT:E Features

  • Memory Type and Format: The MT53E384M32D2FW-046 AAT:E features volatile DRAM memory, which is ideal for applications that require frequent data updates and high-speed access. The parallel memory interface ensures efficient data transfer and synchronization with other system components.
  • Clock Frequency and Access Time: With a clock frequency of 1.066 GHz and an access time of 3.5 ns, this DRAM chip provides exceptional performance, enabling rapid data retrieval and processing. The write cycle time of 18 ns ensures efficient data writing, making it suitable for high-speed applications.
  • Voltage and Power Efficiency: The supply voltage range of 1.06V to 1.17V ensures power efficiency, making the MT53E384M32D2FW-046 AAT:E suitable for power-sensitive applications while maintaining high performance.
  • Mounting and Packaging: The surface mount type and bulk packaging make it easy to integrate into various electronic systems, ensuring compatibility with modern manufacturing processes.
  • Regulatory Compliance: The MT53E384M32D2FW-046 AAT:E is REACH unaffected, ensuring compliance with environmental regulations and suitability for global markets.

MT53E384M32D2FW-046 AAT:E Applications

The MT53E384M32D2FW-046 AAT:E is ideal for applications that require high-speed, high-capacity memory solutions. Some specific use cases include:

  • Networking Equipment: High-speed routers and switches that require rapid data processing and storage.
  • Telecommunications: Base stations and other telecom infrastructure that need efficient memory management for real-time data handling.
  • High-Performance Computing: Servers and workstations that demand fast access to large data sets for intensive computational tasks.
  • Industrial Automation: Control systems and industrial computers that require reliable and fast memory to manage complex processes.

Conclusion of MT53E384M32D2FW-046 AAT:E

The MT53E384M32D2FW-046 AAT:E from Micron Technology Inc. is a high-performance DRAM memory IC chip that offers significant advantages over similar models. Its high clock frequency, fast access time, and large memory capacity make it an ideal choice for applications requiring high-speed data processing and storage. Despite being marked as obsolete, the MT53E384M32D2FW-046 AAT:E remains a reliable and efficient memory solution for various industries. Its power efficiency, surface mount compatibility, and regulatory compliance further enhance its appeal for modern electronic systems.

FAQ

What voltage specification is listed for MT53E384M32D2FW-046 AAT:E?
The listed voltage-related specification for MT53E384M32D2FW-046 AAT:E is 1.06V ~ 1.17V.
What operating temperature range does MT53E384M32D2FW-046 AAT:E support?
What package or case is MT53E384M32D2FW-046 AAT:E available in?
What is MT53E384M32D2FW-046 AAT:E?
Is MT53E384M32D2FW-046 AAT:E currently in stock?
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