Micron Technology_MT53E768M32D4DT-046 WT:E TR
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Micron Technology
MT53E768M32D4DT-046 WT:E TR

774-MT53E768M32D4DT-046 WT:E TR
IC DRAM 24GBIT 2.133GHZ 200VFBGA

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Tech Specifications

Clock Frequency
2.133 GHz
Memory Type
Volatile
Product Status
Obsolete
Supplier Device Package
200-VFBGA (10x14.5)
Package / Case
200-VFBGA
Technology
SDRAM - Mobile LPDDR4
Voltage - Supply
1.1V
REACH Status
REACH Unaffected
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MT53E768M32D4DT-046 WT:E TR Description

MT53E768M32D4DT-046 WT:E TR Description

The MT53E768M32D4DT-046 WT:E TR is a high-performance, 24Gbit DRAM memory IC designed by Micron Technology Inc. This device is part of the obsolete product line, yet it remains a reliable choice for applications requiring significant memory capacity and fast data access speeds. The memory is organized as 768M x 32, providing a robust architecture for handling large volumes of data efficiently. With a clock frequency of 2.133 GHz, this IC ensures rapid processing capabilities, making it suitable for demanding automotive applications.

The MT53E768M32D4DT-046 WT:E TR is packaged in a 200-ball fine-pitch ball grid array (200VFBGA) and is designed for surface-mount technology, facilitating easy integration into compact and high-density PCB designs. The memory operates at a supply voltage of 1.1V, contributing to energy efficiency and reduced power consumption. This IC is REACH unaffected and ROHS3 compliant, ensuring it meets stringent environmental standards. The moisture sensitivity level (MSL) is rated at 3 (168 hours), making it suitable for various environmental conditions.

MT53E768M32D4DT-046 WT:E TR Features

  • High Memory Capacity: With a 24Gbit memory size, this IC offers substantial storage for complex data processing tasks.
  • Fast Data Access: The 2.133 GHz clock frequency ensures rapid data retrieval and processing, enhancing overall system performance.
  • Volatile Memory: As a DRAM device, it provides fast read/write speeds, ideal for applications requiring frequent data updates.
  • Automotive Grade: This IC is designed to meet the stringent requirements of automotive applications, ensuring reliability and durability in harsh environments.
  • Surface Mount Technology: The surface-mount package allows for easy integration into modern PCB designs, optimizing space utilization.
  • Environmental Compliance: ROHS3 compliance and REACH unaffected status ensure that this product meets global environmental regulations.
  • Moisture Resistance: An MSL rating of 3 (168 hours) provides protection against moisture, enhancing the IC's reliability in various operating conditions.

MT53E768M32D4DT-046 WT:E TR Applications

The MT53E768M32D4DT-046 WT:E TR is particularly well-suited for automotive applications where high memory capacity and fast data access are critical. Its automotive-grade design ensures it can withstand the demanding conditions often found in vehicles, including temperature extremes and vibration. This IC is ideal for advanced driver-assistance systems (ADAS), infotainment systems, and other automotive electronics that require significant memory resources.

Conclusion of MT53E768M32D4DT-046 WT:E TR

The MT53E768M32D4DT-046 WT:E TR is a powerful DRAM memory IC that offers a combination of high memory capacity, fast data access speeds, and automotive-grade reliability. Despite its obsolete status, it remains a viable option for applications that require robust memory solutions. Its compliance with environmental regulations and moisture resistance further enhance its appeal. For applications in the automotive sector, this IC provides a reliable and efficient memory solution that can significantly enhance system performance.

FAQ

What operating temperature range does MT53E768M32D4DT-046 WT:E TR support?
MT53E768M32D4DT-046 WT:E TR has an operating temperature range of -40°C ~ 125°C (TC).
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