Micron Technology Tariff Inquiry

MT53E768M32D4DT-053 WT:E TR

MT53E768M32D4DT-053 WT:E TR Description

The MT53E768M32D4DT-053 WT:E TR is a high-performance DRAM memory IC designed by Micron Technology Inc., offering a substantial memory size of 24 Gbit. This IC operates at a clock frequency of 1.866 GHz, ensuring rapid data access and transfer speeds, which are critical for demanding applications. The memory is organized as 768M x 32, providing a robust structure for efficient data handling. This product is packaged in a 200-ball fine-pitch ball grid array (200VFBGA) and is available in a tape and reel (TR) format, making it suitable for automated surface-mount assembly processes.

MT53E768M32D4DT-053 WT:E TR Features

• High-Speed Performance: With a clock frequency of 1.866 GHz, the MT53E768M32D4DT-053 WT:E TR delivers exceptional speed, making it ideal for applications requiring rapid data processing.
• Volatile Memory: As a DRAM device, it provides volatile memory, which is essential for systems that require frequent data updates and high-speed read/write operations.
• Automotive Grade: Certified for automotive use, this IC meets the stringent reliability and performance standards required for automotive electronics.
• Low Voltage Operation: The 1.1V supply voltage ensures energy efficiency, which is crucial for applications where power consumption is a concern.
• Moisture Sensitivity Level (MSL) 3: This rating indicates that the component can withstand up to 168 hours of exposure to moisture, making it suitable for environments with varying humidity levels.
• Compliance: The MT53E768M32D4DT-053 WT:E TR is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and regulatory standards.
• Packaging: The 200VFBGA package and tape and reel format facilitate easy integration into modern manufacturing processes.

MT53E768M32D4DT-053 WT:E TR Applications

The MT53E768M32D4DT-053 WT:E TR is well-suited for a variety of applications, particularly those in the automotive sector. Its high-speed performance and automotive-grade certification make it ideal for advanced driver assistance systems (ADAS), infotainment systems, and other automotive electronics that require reliable and fast memory solutions. Additionally, its low voltage operation and compliance with environmental standards make it suitable for green and energy-efficient designs.

Conclusion of MT53E768M32D4DT-053 WT:E TR

The MT53E768M32D4DT-053 WT:E TR is a powerful DRAM memory IC that offers significant performance benefits and is tailored for automotive applications. Its high clock frequency, low voltage operation, and automotive-grade certification make it a reliable choice for demanding environments. Despite being marked as obsolete, this product remains a robust solution for applications where high-speed, reliable memory is essential. Its compliance with environmental and regulatory standards further enhances its suitability for modern, eco-friendly designs.