Micron Technology Tariff Inquiry

N25Q008A11EF640E

N25Q008A11EF640E Description

The N25Q008A11EF640E is a high-performance flash memory integrated circuit (IC) designed for applications requiring reliable and efficient data storage. Manufactured by Micron Technology Inc., this memory IC features an 8 Mbit capacity organized as 1M x 8, providing ample space for code and data storage. The device operates with a supply voltage range of 1.7V to 2V, making it suitable for low-power applications. It supports a clock frequency of up to 108 MHz, ensuring fast data transfer rates and quick response times.

The N25Q008A11EF640E is equipped with a Serial Peripheral Interface (SPI), which simplifies communication with microcontrollers and other system components. Its write cycle times are optimized for efficiency, with a word write cycle time of 8ms and a page write cycle time of 5ms. This makes it ideal for applications where frequent data updates are necessary.

N25Q008A11EF640E Features

• Memory Capacity and Organization: The N25Q008A11EF640E offers an 8 Mbit memory size, organized as 1M x 8, providing a flexible and efficient storage solution.
• High-Speed Operation: With a clock frequency of 108 MHz, this memory IC ensures rapid data access and transfer, enhancing overall system performance.
• Low-Power Consumption: The device operates within a voltage range of 1.7V to 2V, making it suitable for battery-powered and low-power applications.
• Fast Write Cycles: The write cycle times are optimized for efficiency, with a word write cycle time of 8ms and a page write cycle time of 5ms, facilitating quick data updates.
• SPI Interface: The Serial Peripheral Interface (SPI) simplifies communication with microcontrollers and other system components, ensuring seamless integration.
• Compliance and Standards: The N25Q008A11EF640E is REACH unaffected and RoHS3 compliant, adhering to stringent environmental and safety standards.
• Packaging: Available in a tray package, it is suitable for automated assembly processes and ensures reliable handling during manufacturing.
• Moisture Sensitivity Level: With an MSL of 3 (168 hours), the device is well-suited for environments with varying humidity levels.

N25Q008A11EF640E Applications

The N25Q008A11EF640E is ideal for a variety of applications where reliable and efficient data storage is crucial. Some specific use cases include:

• Embedded Systems: Ideal for embedded systems requiring non-volatile memory for code and data storage.
• Consumer Electronics: Suitable for consumer electronics where fast data access and low power consumption are essential.
• Industrial Automation: Provides robust and reliable storage for industrial applications that demand high performance and durability.
• Telecommunications: Enhances the performance of telecommunication equipment with its high-speed data transfer capabilities.
• Automotive Systems: Meets the stringent requirements of automotive systems, ensuring reliable operation in various environmental conditions.

Conclusion of N25Q008A11EF640E

The N25Q008A11EF640E is a high-performance flash memory IC that offers a combination of high capacity, fast operation, and low power consumption. Its unique features, such as the optimized write cycle times and SPI interface, make it a superior choice over similar models. The device's compliance with environmental and safety standards ensures its suitability for a wide range of applications. Whether used in embedded systems, consumer electronics, or industrial automation, the N25Q008A11EF640E provides reliable and efficient data storage solutions, making it an excellent choice for modern electronic designs.