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Micron Technology

N25Q128A13ESE40F

Name: N25Q128A13ESE40F
Brand: Micron Technology
SKU: 774-N25Q128A13ESE40F

Manufacturer:

Micron Technology

ERSA Part #:

774-N25Q128A13ESE40F

Datasheet:

PDF Datasheet

Description:

NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 128M-bit 128M/64M/32M x 1/2-bit/4-bit 7ns 8-Pin SOIC W T/R

RoHS Status:

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Tech Specifications

Program Current (mA)

PCB changed

HTS

N25Q128A13ESE40F

ECCN (US)

3A991b.1.a.

Programming Voltage (V)

2.7 to 3.6|8.5 to 9.5

PPAP

Operating Current (mA)

Automotive

N25Q128A13ESE40F Description

Product Overview

The N25Q128A13ESE40F is a 128Mb (16MB) serial NOR Flash memory device from Micron Technology. It is a high-performance, multi-I/O memory manufactured on 65nm NOR technology. It is designed for a wide range of embedded applications that require fast and reliable non-volatile code and data storage, including automotive, industrial, and consumer electronics. Note: While some sources label the part as Active or Obsolete, it is strongly recommended to check the latest lifecycle status with Micron before designing it into a new project.

⚙️ Key Technical Specifications

Memory Size: 128 Megabits (16 Megabytes)
Memory Organization: 16 M x 8 bits (byte mode)
Technology: NOR Flash
Interface: Serial Peripheral Interface (SPI)
Max. Clock Frequency: 108 MHz
Supply Voltage (Vcc): 2.7V to 3.6V
Max. Access Time: 7 ns
Max. Supply Current: 20 mA
Operating Temperature: -40°C to +85°C (Industrial)
Package: 8-pin SOIC (SO-8W), with a 208 mil body width

🚀 Advanced Features

High-Speed Multi-I/O: It supports standard SPI, dual I/O, and quad I/O protocols, with the latter providing up to 432 MHz of equivalent throughput to enhance read and program operations.
Execute-in-Place (XIP): It supports XIP mode, which allows a host processor to execute code directly from the flash memory without needing to copy it to RAM first. This mode is configurable via volatile or non-volatile registers and can be the default state after power-on.
Flexible Erase Capabilities: The memory array can be erased with 4KB subsector granularity, as uniform 64KB sectors, or as an entire chip, accommodating a wide range of data storage and code update patterns.
Advanced Write Protection: Offers robust protection features, including software write protection for each 64KB sector, hardware write protection with configurable protected area sizes, and additional smart security options.
Security and Identification: It includes a 64-byte one-time programmable (OTP) area that can be permanently locked, a JEDEC-standard 2-byte signature (BA18h), and a 17-byte unique ID code (UID) for device identification and traceability.
Program/Erase Suspend: Provides the ability to pause and resume PROGRAM and ERASE cycles, allowing higher priority system tasks to be executed in between flash operations.
Software Reset: Features a software reset capability, which can return the device to a known state without a power cycle.

🔢 Part Number Interpretation

The N25Q128A13ESE40F part number can be broken down as follows:

Part of the Code	Meaning
`N25Q`	Product family: Serial NOR Flash memory, Multiple Input/Output, XIP
`128`	Density: 128 Megabits
`A`	Technology: 65nm
`1`	Feature Set: Byte addressability; HOLD pin; Micron XIP
`3`	Operating Voltage: Vcc = 2.7 to 3.6V
`E`	Block Structure: Uniform (64KB and 4KB)
`SE`	Package: SOP2-8 208 mils body width (SO8W), RoHS-compliant
`4`	Temperature & Test Flow: IT: –40°C to +85°C; Standard test flow
`0`	Security Features: Default
`F`	Shipping Material: Tape and reel

The N25Q128A13ESE40FTR variant comes in Tape & Reel packaging with a quantity of 1500 units per reel.

FAQ

A: The N25Q128A13ESE40F is a 128-megabit (16-megabyte) serial NOR Flash memory device manufactured by Micron Technology (originally under the Numonyx brand). It is part of Micron's N25Q series and is built on advanced 65nm NOR technology, making it one of the first high-performance multi‑I/O serial flash memory devices available. The device communicates via a Serial Peripheral Interface (SPI) and is housed in an 8‑pin SOIC (Small Outline Integrated Circuit) package, also known as SO‑8W or SOP2‑8, with a body width of 208 mils (5.28mm). It operates over a wide supply voltage range of 2.7V to 3.6V, ensuring compatibility with both 3.0V and 3.3V systems, and features an industrial temperature range of –40°C to +85°C, making it suitable for applications requiring reliable non‑volatile storage in harsh environments.

A: The N25Q128A13ESE40F offers a flexible and extensive set of interface modes and advanced features to support diverse embedded applications: Multi‑Protocol SPI Support: The device can operate in three different protocols: Extended SPI (standard), Dual I/O SPI (DIO-SPI), and Quad I/O SPI (QIO-SPI). In Quad I/O mode, the effective data throughput reaches up to 432 MHz. Execute‑in‑Place (XIP) Mode: The device features XIP functionality, allowing the host processor to execute code directly from the flash memory without having to copy it into RAM first. The XIP mode is available for all three protocols (Extended, Dual I/O, and Quad I/O SPI) and can be configured via volatile or non‑volatile registers, or can even operate in XIP mode directly after power‑on. Memory Organization: The memory is organized as 256 main sectors of 64KB each, which are further subdivided into 16 subsectors each, resulting in a total of 4,096 subsectors of 4KB each. This flexible architecture allows both subsector erase (4KB) and sector erase (64KB) for efficient memory management. Program/Erase Suspend and Resume: The device supports dedicated PROGRAM/ERASE SUSPEND and RESUME instructions, allowing the system to pause an ongoing erase or program cycle to execute higher‑priority tasks, then resume the operation later. Software Reset: A software reset feature is available, enabling the device to be returned to a known state without a power cycle, improving system robustness. Continuous Read: The entire memory can be read via a single command, supporting fast read, quad or dual output fast read, and quad or dual I/O fast read operations. The number of dummy cycles and output buffer configuration are both adjustable to flexibly fit application requirements. Write Protection: The memory can be write‑protected by software using both volatile and non‑volatile protection features, applicable to every 64KB sector. Additional hardware write protection is also supported, with the protected area size defined by five non‑volatile bits (BP0, BP1, BP2, BP3, and TB). Security and Identification: The device includes a 64‑byte user‑lockable One‑Time Programmable (OTP) dedicated area that can be read and programmed using READ OTP and PROGRAM OTP commands, and these 64 bytes can be permanently locked. It also features an electronic signature with a JEDEC‑standard 2‑byte signature (BA18h) and a unique ID code (UID) consisting of 17 read‑only bytes, including two additional extended device ID (EDID) bytes for device identification.