Micron Technology_NAND01GW3B2CN6E
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Micron Technology
NAND01GW3B2CN6E

774-NAND01GW3B2CN6E
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IC FLASH 1GBIT PARALLEL 48TSOP

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
128M x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
48-TSOP
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NAND01GW3B2CN6E Description

NAND01GW3B2CN6E Description

The NAND01GW3B2CN6E is a high-performance, 1 Gbit NAND flash memory IC designed for a wide range of applications requiring reliable and efficient data storage solutions. Manufactured by Micron Technology, this memory IC chip is part of the NAND01 base product series and is housed in a 48TSOP package, ensuring robustness and compatibility with surface-mount technology.

This memory IC features a parallel memory interface, providing fast data transfer rates and efficient communication with host systems. The NAND01GW3B2CN6E supports an access time of 25 ns and a write cycle time of 25 ns for both word and page operations, making it suitable for applications that demand rapid data read and write capabilities. The memory organization is 128M x 8, offering a balanced configuration for various storage needs.

The NAND01GW3B2CN6E operates within a voltage supply range of 2.7V to 3.6V, ensuring flexibility and compatibility with different power supply configurations. It is also compliant with REACH and ROHS3 standards, confirming its environmental safety and suitability for use in a variety of industries. The moisture sensitivity level (MSL) is rated at 3 (168 hours), indicating its resilience in varying environmental conditions.

NAND01GW3B2CN6E Features

  • High Capacity Storage: With a memory size of 1 Gbit, the NAND01GW3B2CN6E provides ample storage for applications requiring significant data retention.
  • Fast Access and Write Times: The 25 ns access time and 25 ns write cycle time ensure rapid data processing, making it ideal for high-speed applications.
  • Parallel Interface: The parallel memory interface facilitates efficient data transfer, enhancing overall system performance.
  • Flexible Voltage Range: The 2.7V to 3.6V supply voltage range offers compatibility with various power supply configurations.
  • Compliance and Safety: The NAND01GW3B2CN6E is REACH unaffected and ROHS3 compliant, ensuring it meets environmental and safety standards.
  • Moisture Resistance: The MSL rating of 3 (168 hours) ensures reliability in varying environmental conditions.
  • Surface Mount Compatibility: The surface-mount mounting type allows for easy integration into modern PCB designs.

NAND01GW3B2CN6E Applications

The NAND01GW3B2CN6E is well-suited for a variety of applications where reliable and efficient data storage is critical. Its high capacity and fast access times make it ideal for:

  • Embedded Systems: Providing non-volatile storage for firmware and critical data in embedded devices.
  • Industrial Automation: Storing configuration data and logs in industrial control systems.
  • Telecommunications: Storing firmware and configuration data in communication equipment.
  • Consumer Electronics: Offering reliable storage solutions in devices such as digital cameras, media players, and smart home devices.

Conclusion of NAND01GW3B2CN6E

The NAND01GW3B2CN6E is a versatile and high-performance NAND flash memory IC that offers significant advantages over similar models. Its fast access and write times, combined with a parallel interface and flexible voltage range, make it an excellent choice for applications requiring rapid data processing and reliable storage. The compliance with environmental and safety standards further enhances its suitability for a wide range of industries. Despite being marked as obsolete, the NAND01GW3B2CN6E remains a robust and reliable option for applications where its features are still highly relevant.

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