Micron Technology_NAND04GW3C2BN6E
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Micron Technology
NAND04GW3C2BN6E

774-NAND04GW3C2BN6E
IC FLASH 4GBIT PARALLEL 48TSOP

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
512M x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
48-TSOP
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NAND04GW3C2BN6E Description

NAND04GW3C2BN6E Description

The NAND04GW3C2BN6E is a 4Gbit NAND Flash memory IC designed for high-performance storage applications. Manufactured by Micron Technology Inc., this IC features a parallel memory interface and is housed in a 48TSOP package. With a memory organization of 512M x 8, it offers robust storage capabilities ideal for various electronic systems. The NAND04GW3C2BN6E operates within a supply voltage range of 2.7V to 3.6V and has an access time of 25 ns, ensuring fast read and write operations. This IC is designed for surface mount applications and is REACH unaffected, RoHS3 compliant, and classified under HTSUS code 8542.32.0071. Although it is now obsolete, the NAND04GW3C2BN6E remains a reliable choice for legacy systems requiring NAND Flash memory.

NAND04GW3C2BN6E Features

  • Memory Size and Organization: The NAND04GW3C2BN6E boasts a 4Gbit memory size organized as 512M x 8, providing substantial storage capacity in a compact form factor.
  • Fast Access Time: With an access time of 25 ns and a write cycle time of 25 ns for both word and page operations, this IC ensures rapid data retrieval and storage, enhancing overall system performance.
  • Voltage Flexibility: Operating within a supply voltage range of 2.7V to 3.6V, this IC is versatile and can be integrated into various power supply designs without significant modifications.
  • Surface Mount Compatibility: Designed for surface mount technology, the NAND04GW3C2BN6E is suitable for modern PCB assembly processes, facilitating efficient manufacturing and reduced footprint.
  • Environmental Compliance: This product is REACH unaffected and RoHS3 compliant, ensuring it meets stringent environmental standards and regulatory requirements.
  • Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the NAND04GW3C2BN6E is suitable for environments with moderate humidity levels, providing reliability in diverse operational conditions.

NAND04GW3C2BN6E Applications

The NAND04GW3C2BN6E is well-suited for a variety of applications requiring high-density, non-volatile storage solutions. Key applications include:

  • Embedded Systems: Ideal for embedded devices that require reliable storage for firmware and data, such as routers, set-top boxes, and industrial controllers.
  • Consumer Electronics: Suitable for consumer electronics like digital cameras, media players, and smart TVs, where fast data access and storage are crucial.
  • Automotive Electronics: Can be used in automotive infotainment systems and advanced driver assistance systems (ADAS) for storing critical data and software.
  • Industrial Automation: Provides robust storage solutions for industrial automation systems, ensuring data integrity and fast retrieval in harsh industrial environments.
  • Networking Equipment: Enhances the performance of networking equipment by providing fast and reliable storage for configuration files and operational data.

Conclusion of NAND04GW3C2BN6E

The NAND04GW3C2BN6E is a reliable and high-performance NAND Flash memory IC designed to meet the demanding requirements of modern electronic systems. Despite its obsolescence, it remains a viable option for legacy systems and applications that require a 4Gbit NAND Flash solution. Its fast access time, flexible voltage range, and environmental compliance make it a standout choice in its category. For applications needing robust, non-volatile storage with fast read and write capabilities, the NAND04GW3C2BN6E is an excellent choice.

FAQ

What operating temperature range does NAND04GW3C2BN6E support?
NAND04GW3C2BN6E has an operating temperature range of -40°C ~ 85°C (TA).
What is NAND04GW3C2BN6E?
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