Micron Technology_NAND08GW3C2BN6E
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Micron Technology
NAND08GW3C2BN6E

774-NAND08GW3C2BN6E
IC FLASH 8GBIT PARALLEL 48TSOP

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
1G x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
48-TSOP
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NAND08GW3C2BN6E Description

NAND08GW3C2BN6E Description

The NAND08GW3C2BN6E is a high-performance memory IC chip designed by Micron Technology Inc., offering a robust solution for applications requiring significant storage capacity and fast data access. This chip features an 8Gbit (1G x 8) memory organization, providing substantial storage in a compact 48TSOP package. The NAND08GW3C2BN6E is equipped with a parallel memory interface, ensuring efficient data transfer and compatibility with a wide range of systems. It operates within a supply voltage range of 2.7V to 3.6V, making it suitable for various power requirements.

NAND08GW3C2BN6E Features

  • Memory Size and Organization: The NAND08GW3C2BN6E boasts an 8Gbit memory size, organized as 1G x 8, which is ideal for applications requiring large storage capacities.
  • Fast Access Time: With an access time of 25 ns and a write cycle time of 25 ns, this chip ensures rapid data retrieval and writing, enhancing overall system performance.
  • Parallel Interface: The parallel memory interface facilitates high-speed data transfer, making it suitable for systems that require quick data processing.
  • Surface Mount Technology: The surface mount mounting type allows for efficient integration into modern PCB designs, ensuring compact and reliable installations.
  • Compatibility and Compliance: The NAND08GW3C2BN6E is REACH unaffected and RoHS3 compliant, adhering to stringent environmental and safety standards.
  • Moisture Sensitivity Level: With an MSL of 3 (168 hours), this chip is designed to withstand moisture exposure during manufacturing processes, ensuring reliability and longevity.

NAND08GW3C2BN6E Applications

The NAND08GW3C2BN6E is well-suited for a variety of applications that demand high storage capacity and fast data access. Some specific use cases include:

  • Embedded Systems: Ideal for embedded systems requiring large storage capacities and fast data processing capabilities.
  • Industrial Automation: Suitable for industrial applications where reliability and high-speed data transfer are critical.
  • Consumer Electronics: Can be used in consumer electronics devices that need substantial storage and quick data access, such as digital cameras and media players.
  • Networking Equipment: Enhances the performance of networking devices by providing fast and reliable storage solutions.

Conclusion of NAND08GW3C2BN6E

The NAND08GW3C2BN6E from Micron Technology Inc. is a versatile and high-performance memory IC chip, offering significant storage capacity and fast data access. Its 8Gbit memory size and 25 ns access time make it an excellent choice for applications requiring large storage and rapid data processing. The parallel memory interface and surface mount technology ensure compatibility and ease of integration into modern systems. While the product is now considered obsolete, its technical specifications and performance benefits continue to make it a valuable option for specific applications. For those seeking a reliable and high-performance memory solution, the NAND08GW3C2BN6E remains a noteworthy choice.

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NAND08GW3C2BN6E is a Memory ICs Products from Micron Technology. This product page provides its main specifications, pricing information, availability, and inquiry options.
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