Micron Technology_NAND128W3A0BN6F TR
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Micron Technology
NAND128W3A0BN6F TR

774-NAND128W3A0BN6F TR
IC FLASH 128MBIT PARALLEL 48TSOP

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
16M x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
48-TSOP
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NAND128W3A0BN6F TR Description

NAND128W3A0BN6F TR Description

The NAND128W3A0BN6F TR is a high-performance, 128 Mbit Flash memory IC designed for parallel interfacing applications. Manufactured by Micron Technology Inc., this memory IC chip is housed in a 48-pin TSOP package and is available in a tape and reel (TR) format. This product is ideal for applications requiring fast access times and reliable data storage. Despite being marked as obsolete, the NAND128W3A0BN6F TR remains a robust choice for legacy systems and embedded specific applications.

NAND128W3A0BN6F TR Features

  • Memory Organization: The NAND128W3A0BN6F TR features a 16M x 8 memory organization, providing a total memory size of 128 Mbit. This configuration ensures efficient memory management and data retrieval.
  • Access Time: With an access time of 50 ns, this Flash memory IC offers rapid data access, making it suitable for high-speed applications.
  • Write Cycle Time: The write cycle time for both word and page operations is 50 ns, ensuring quick data write operations without compromising performance.
  • Voltage Supply: The memory IC operates within a voltage range of 2.7V to 3.6V, providing flexibility in power supply requirements.
  • Mounting Type: Surface mount technology (SMT) allows for easy integration into compact and high-density PCB designs.
  • Compliance and Safety: The NAND128W3A0BN6F TR is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and safety standards.
  • Moisture Sensitivity Level: With an MSL of 3 (168 hours), the IC is suitable for manufacturing processes that require protection from moisture exposure.

NAND128W3A0BN6F TR Applications

The NAND128W3A0BN6F TR is well-suited for a variety of applications, including:

  • Embedded Systems: Ideal for embedded systems requiring non-volatile memory for firmware storage and data logging.
  • Industrial Control: Suitable for industrial control applications where reliable and fast memory access is crucial.
  • Telecommunications: Can be used in telecommunications equipment for storing configuration data and firmware.
  • Consumer Electronics: Applicable in consumer electronics for storing system software and user data.

Conclusion of NAND128W3A06BNF TR

The NAND128W3A0BN6F TR, despite its obsolete status, remains a reliable and efficient Flash memory solution for parallel interfacing applications. Its fast access and write cycle times, combined with its robust memory organization and compliance with industry standards, make it a valuable component for legacy systems and specific embedded applications. For designers and engineers seeking a dependable memory IC with proven performance, the NAND128W3A0BN6F TR is a worthy consideration.

FAQ

What voltage specification is listed for NAND128W3A0BN6F TR?
The listed voltage-related specification for NAND128W3A0BN6F TR is 2.7V ~ 3.6V.
What operating temperature range does NAND128W3A0BN6F TR support?
What is NAND128W3A0BN6F TR?
Is NAND128W3A0BN6F TR currently in stock?
What is the mounting type of NAND128W3A0BN6F TR?
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