Micron Technology

NAND128W3AABN6F TR

NAND128W3AABN6F TR Description

The NAND128W3AABN6F TR is a 128 Mbit NAND Flash memory IC designed for high-performance and reliable storage solutions. Manufactured by Micron Technology Inc., this memory IC chip features a parallel memory interface and is organized in a 16M x 8 configuration. The device operates within a voltage range of 2.7V to 3.6V and offers an access time of 50 ns, ensuring rapid data retrieval. The write cycle time for both word and page operations is also 50 ns, providing efficient data writing capabilities.

This NAND Flash memory is packaged in a 48-pin TSOP (Thin Small Outline Package) and is available in a Tape & Reel (TR) format, making it suitable for surface mount applications. The NAND128W3AABN6F TR is ROHS3 compliant and has a moisture sensitivity level (MSL) of 3, allowing for a 168-hour exposure before reflow soldering.

NAND128W3AABN6F TR Features

• High Memory Density: With a memory size of 128 Mbit, the NAND128W3AABN6F TR offers significant storage capacity in a compact form factor.
• Fast Access and Write Times: The 50 ns access time and 50 ns write cycle time ensure efficient data handling, making it ideal for applications requiring quick data read and write operations.
• Wide Voltage Range: The device operates within a voltage range of 2.7V to 3.6V, providing flexibility in power supply requirements.
• Parallel Interface: The parallel memory interface allows for high-speed data transfer, enhancing overall system performance.
• Surface Mount Compatibility: The 48TSOP package and Tape & Reel format make it suitable for automated assembly processes, reducing production costs and improving reliability.
• Environmental Compliance: ROHS3 compliance ensures that the NAND128W3AABN6F TR meets the latest environmental standards, making it suitable for use in a wide range of applications.
• Moisture Sensitivity Level 3: The MSL 3 rating allows for a 168-hour exposure before reflow soldering, providing flexibility in manufacturing processes.

NAND128W3AABN6F TR Applications

The NAND128W3AABN6F TR is ideal for a variety of applications where high-density, non-volatile storage is required. Some specific use cases include:

• Embedded Systems: Ideal for embedded systems requiring reliable and efficient storage solutions, such as industrial control systems, automotive electronics, and IoT devices.
• Consumer Electronics: Suitable for consumer electronics like digital cameras, media players, and smart home devices where compact and high-performance storage is essential.
• Data Logging: Perfect for applications involving data logging and storage, such as environmental monitoring systems and medical devices.
• Telecommunications: Useful in telecommunications equipment where quick data access and storage are critical, such as routers and switches.

Conclusion of NAND128W3AABN6F TR

The NAND128W3AABN6F TR from Micron Technology Inc. is a robust and efficient NAND Flash memory IC designed to meet the demands of modern electronic systems. With its high memory density, fast access and write times, and compatibility with surface mount assembly, this device offers significant advantages over similar models. Its wide voltage range, parallel interface, and environmental compliance make it a versatile and reliable choice for a variety of applications. Despite being marked as obsolete, the1 NAND28W3AABN6F TR remains a valuable component for legacy systems and applications where its unique features and performance benefits are still highly relevant.