Micron Technology Tariff Inquiry

NAND256W3A2BNXE

NAND256W3A2BNXE Description

The NAND256W3A2BNXE is a 256Mbit NAND Flash memory IC designed for high-performance applications requiring robust storage solutions. Manufactured by Micron Technology Inc., this memory IC chip features a parallel memory interface, making it suitable for systems that demand fast data transfer rates and efficient memory management. The device is organized as 32M x 8, providing a balanced memory structure that supports both large data blocks and efficient addressing.

NAND256W3A2BNXE Features

• Memory Size and Organization: The NAND256W3A2BNXE offers a total memory capacity of 256Mbit, organized into 32M x 8 blocks. This configuration ensures efficient memory utilization and high-speed data access.
• Access Time: With an access time of 50 ns, this NAND Flash memory IC provides rapid data retrieval, essential for real-time applications and systems requiring quick response times.
• Write Cycle Time: The write cycle time for both word and page operations is 50 ns, ensuring consistent performance during data write operations.
• Voltage Supply: The device operates within a voltage range of 2.7V to 3.6V, making it compatible with a wide range of power supply systems and ensuring reliable operation under varying power conditions.
• Mounting Type: Surface mount technology (SMT) allows for compact and efficient integration into modern electronic systems, reducing the overall footprint and enhancing thermal performance.
• Package Type: The NAND256W3A2BNXE is available in a tray package, facilitating easy handling and integration into assembly processes.
• Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the device is suitable for environments with moderate humidity levels, ensuring long-term reliability and performance.
• Compliance: The NAND256W3A2BNXE is REACH unaffected and RoHS3 compliant, adhering to stringent environmental and safety standards, making it suitable for a wide range of applications.

NAND256W3A2BNXE Applications

The NAND256W3A2BNXE is ideal for applications requiring high-density, non-volatile memory solutions. Its fast access and write cycle times make it suitable for:

• Embedded Systems: Ideal for embedded systems that require reliable and fast storage solutions, such as industrial control systems, automotive electronics, and IoT devices.
• Consumer Electronics: Suitable for consumer electronics like digital cameras, media players, and smart home devices, where quick data access and storage are crucial.
• Telecommunications: Effective in telecommunications infrastructure, including base stations and network routers, where data integrity and speed are paramount.
• Medical Devices: Applicable in medical devices that require non-volatile memory for storing critical data, such as patient records and device configurations.

Conclusion of NAND256W3A2BNXE

The NAND256W3A2BNXE is a high-performance NAND Flash memory IC that offers a robust and reliable storage solution for a variety of applications. Its fast access and write cycle times, combined with its compact surface mount design and compliance with environmental standards, make it an excellent choice for modern electronic systems. Despite being marked as obsolete, the NAND256W3A2BNXE remains a viable option for applications that require proven, high-density memory solutions.