Micron Technology_NAND256W3A2BZA6F TR
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Micron Technology
NAND256W3A2BZA6F TR

774-NAND256W3A2BZA6F TR
IC FLASH 256MBIT PAR 55VFBGA

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
32M x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
55-VFBGA (8x10)
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NAND256W3A2BZA6F TR Description

NAND256W3A2BZA6F TR Description

The NAND256W3A2BZA6F TR is a high-performance 256 Mbit Flash memory IC chip, designed and manufactured by Micron Technology Inc. This memory device is organized as 32M x 8, providing a robust solution for applications requiring reliable and efficient data storage. The NAND256W3A2BZA6F TR features a parallel memory interface, ensuring fast data transfer rates and compatibility with a wide range of systems. With an access time of 50 ns and a write cycle time of 50 ns for both word and page operations, this IC offers exceptional performance for its memory size.

NAND256W3A2BZA6F TR Features

  • Memory Size and Organization: The NAND256W3A2BZA6F TR boasts a memory size of 256 Mbit, organized in a 32M x 8 configuration. This structure provides a balance between capacity and data width, making it suitable for various applications.
  • Performance: The device offers an access time of 50 ns and a write cycle time of 50 ns for both word and page operations. These specifications ensure rapid data retrieval and storage, enhancing overall system performance.
  • Voltage Range: The NAND256W3A2BZA6F TR operates within a voltage range of 2.7V to 3.6V, providing flexibility in power supply requirements and ensuring compatibility with a variety of power systems.
  • Package Type: The NAND256W3A2BZA6F TR is available in a Tape & Reel (TR) package, which is ideal for surface mount applications. This packaging method ensures ease of handling and integration into modern electronic assemblies.
  • Compliance and Status: The device is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and regulatory standards. Additionally, the NAND256W3A2BZA6F TR has a Moisture Sensitivity Level (MSL) of 3 (168 Hours), making it suitable for a range of environmental conditions.
  • ECCN and HTSUS: The NAND256W3A2BZA6F TR is classified under ECCN 3A991B1A and HTSUS 8542.32.0071, providing clear regulatory classifications for international trade and compliance.

NAND256W3A2BZA6F TR Applications

The NAND256W3A2BZA6F TR is ideal for a variety of applications that require reliable and efficient data storage. Its 256 Mbit capacity and fast access times make it suitable for embedded systems, consumer electronics, and industrial applications. Specific use cases include:

  • Embedded Systems: The NAND256W3A2BZA6F TR is well-suited for embedded systems that require non-volatile memory for firmware storage and data logging. Its fast access and write times ensure that the system can quickly retrieve and store data, enhancing overall performance.
  • Consumer Electronics: In devices such as digital cameras, MP3 players, and smart home appliances, the NAND256W3A2BZA6F TR provides a reliable storage solution. Its compact size and surface mount compatibility make it ideal for integration into small form factor devices.
  • Industrial Applications: For industrial control systems and IoT devices, the NAND256W3A2BZA6F TR offers robust data storage capabilities. Its compliance with environmental and regulatory standards ensures that it can operate reliably in various industrial environments.

Conclusion of NAND256W3A2BZA6F TR

The NAND256W3A2BZA6F TR is a high-performance Flash memory IC chip that offers a balance of capacity, speed, and reliability. Its 256 Mbit memory size, fast access and write times, and compatibility with a wide range of systems make it a versatile solution for various applications. Despite its obsolete product status, the NAND256W3A2BZA6F TR remains a reliable choice for applications requiring efficient data storage. Its compliance with environmental and regulatory standards ensures that it meets the requirements of modern electronics manufacturing.

FAQ

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