
Micron Technology
NAND512R3A2SN6F
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NAND512R3A2SN6F Description
NAND512R3A2SN6F Description
The NAND512R3A2SN6F is a 512 Mbit flash memory IC designed by Micron Technology Inc., a leading provider of advanced semiconductor solutions. This memory IC features a parallel memory interface and is organized in a 64M x 8 configuration, offering robust storage capabilities in a compact form factor. The NAND512R3A2SN6F is housed in a 48TSOP package, which is ideal for surface mount applications, ensuring it can be seamlessly integrated into a variety of electronic systems.
This memory IC operates within a supply voltage range of 1.7V to 1.95V, making it energy-efficient and suitable for low-power applications. The access time of 50 ns and a write cycle time of 50 ns for both word and page operations ensure fast data read and write capabilities, crucial for high-performance computing and storage applications. The NAND512R3A2SN6F is also RoHS3 compliant, adhering to stringent environmental standards and ensuring its suitability for use in environmentally conscious designs.
NAND512R3A2SN6F Features
- Memory Size: 512 Mbit, providing ample storage for a wide range of applications.
- Memory Organization: 64M x 8, offering a balanced trade-off between memory depth and width.
- Memory Interface: Parallel, ensuring compatibility with traditional and modern parallel bus architectures.
- Access Time: 50 ns, ensuring rapid data retrieval and processing.
- Write Cycle Time: 50 ns for both word and page operations, facilitating quick data updates.
- Voltage Range: 1.7V to 1.95V, optimized for low-power consumption.
- Package Type: 48TSOP, suitable for surface mount technology (SMT) and ideal for compact designs.
- Moisture Sensitivity Level (MSL): Level 3 (168 hours), ensuring reliability in various environmental conditions.
- RoHS Compliance: ROHS3 compliant, meeting environmental standards and regulatory requirements.
NAND512R3A2SN6F Applications
The NAND512R3A2SN6F is ideal for applications requiring high-density, non-volatile storage with fast access times. Its parallel memory interface and compact 48TSOP package make it suitable for a variety of electronic systems, including:
- Embedded Systems: Ideal for embedded devices requiring reliable storage and fast data access.
- Consumer Electronics: Suitable for devices such as digital cameras, media players, and smart home appliances.
- Industrial Applications: Robust and reliable storage for industrial control systems and IoT devices.
- Telecommunications: Efficient storage solution for network equipment and communication devices.
Conclusion of NAND512R3A2SN6F
The NAND512R3A2SN6F is a versatile and high-performance flash memory IC, offering a combination of large storage capacity, fast access times, and low power consumption. Its parallel memory interface and compact 48TSOP package make it an excellent choice for a wide range of applications, from consumer electronics to industrial systems. Despite being marked as obsolete, the NAND512R3A2SN6F remains a reliable and efficient storage solution, especially for legacy systems and applications where its specific features are still highly valued.



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