Micron Technology_NAND512R3A2SN6F
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Micron Technology
NAND512R3A2SN6F

774-NAND512R3A2SN6F
IC FLASH 512MBIT PAR 48TSOP I

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
64M x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
48-TSOP I
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NAND512R3A2SN6F Description

NAND512R3A2SN6F Description

The NAND512R3A2SN6F is a 512 Mbit flash memory IC designed by Micron Technology Inc., a leading provider of advanced semiconductor solutions. This memory IC features a parallel memory interface and is organized in a 64M x 8 configuration, offering robust storage capabilities in a compact form factor. The NAND512R3A2SN6F is housed in a 48TSOP package, which is ideal for surface mount applications, ensuring it can be seamlessly integrated into a variety of electronic systems.

This memory IC operates within a supply voltage range of 1.7V to 1.95V, making it energy-efficient and suitable for low-power applications. The access time of 50 ns and a write cycle time of 50 ns for both word and page operations ensure fast data read and write capabilities, crucial for high-performance computing and storage applications. The NAND512R3A2SN6F is also RoHS3 compliant, adhering to stringent environmental standards and ensuring its suitability for use in environmentally conscious designs.

NAND512R3A2SN6F Features

  • Memory Size: 512 Mbit, providing ample storage for a wide range of applications.
  • Memory Organization: 64M x 8, offering a balanced trade-off between memory depth and width.
  • Memory Interface: Parallel, ensuring compatibility with traditional and modern parallel bus architectures.
  • Access Time: 50 ns, ensuring rapid data retrieval and processing.
  • Write Cycle Time: 50 ns for both word and page operations, facilitating quick data updates.
  • Voltage Range: 1.7V to 1.95V, optimized for low-power consumption.
  • Package Type: 48TSOP, suitable for surface mount technology (SMT) and ideal for compact designs.
  • Moisture Sensitivity Level (MSL): Level 3 (168 hours), ensuring reliability in various environmental conditions.
  • RoHS Compliance: ROHS3 compliant, meeting environmental standards and regulatory requirements.

NAND512R3A2SN6F Applications

The NAND512R3A2SN6F is ideal for applications requiring high-density, non-volatile storage with fast access times. Its parallel memory interface and compact 48TSOP package make it suitable for a variety of electronic systems, including:

  • Embedded Systems: Ideal for embedded devices requiring reliable storage and fast data access.
  • Consumer Electronics: Suitable for devices such as digital cameras, media players, and smart home appliances.
  • Industrial Applications: Robust and reliable storage for industrial control systems and IoT devices.
  • Telecommunications: Efficient storage solution for network equipment and communication devices.

Conclusion of NAND512R3A2SN6F

The NAND512R3A2SN6F is a versatile and high-performance flash memory IC, offering a combination of large storage capacity, fast access times, and low power consumption. Its parallel memory interface and compact 48TSOP package make it an excellent choice for a wide range of applications, from consumer electronics to industrial systems. Despite being marked as obsolete, the NAND512R3A2SN6F remains a reliable and efficient storage solution, especially for legacy systems and applications where its specific features are still highly valued.

FAQ

What operating temperature range does NAND512R3A2SN6F support?
NAND512R3A2SN6F has an operating temperature range of -40°C ~ 85°C (TA).
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