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NAND512R3A2SZA6E

NAND512R3A2SZA6E Description

The NAND512R3A2SZA6E is a high-performance, 512Mbit NAND flash memory IC from Micron Technology Inc., designed for use in a variety of applications requiring non-volatile storage. This device features a parallel memory interface, providing fast data transfer rates and easy integration into existing systems. With a memory organization of 64M x 8, the NAND512R3A2SZA6E offers ample storage capacity for a wide range of applications.

NAND512R3A2SZA6E Features

• Memory Interface: Parallel, allowing for fast data transfer and compatibility with existing systems.
• Memory Organization: 64M x 8, providing ample storage capacity for various applications.
• Access Time: 50 ns, ensuring rapid data retrieval.
• Write Cycle Time: 50 ns for both word and page operations, enabling efficient data writing.
• Memory Size: 512Mbit, offering significant storage capacity.
• Voltage - Supply: 1.7V ~ 1.95V, supporting a wide range of power supply options.
• Mounting Type: Surface Mount, facilitating easy integration into PCB designs.
• Package: Tray, suitable for bulk handling and storage.
• Memory Format: FLASH, providing non-volatile storage capabilities.
• RoHS Status: ROHS3 Compliant, ensuring environmental compliance.
• Moisture Sensitivity Level (MSL): 3 (168 Hours), indicating the device's resistance to moisture.

NAND512R3A2SZA6E Applications

The NAND512R3A2SZA6E is ideal for applications requiring non-volatile storage and fast data transfer, such as:

1. Embedded Systems: Providing storage for firmware and user data in embedded systems.
2. Industrial Automation: Storing configuration data and program files in industrial control systems.
3. Consumer Electronics: Serving as a storage medium for digital cameras, MP3 players, and other portable devices.
4. Telecommunications: Storing voicemail messages and other data in telecommunications equipment.

Conclusion of NAND512R3A2SZA6E

The NAND512R3A2SZA6E is a versatile, high-performance NAND flash memory IC from Micron Technology Inc., offering a combination of fast data transfer rates, ample storage capacity, and non-volatile storage capabilities. Its unique features, such as a parallel memory interface and 50 ns access and write cycle times, make it an ideal choice for a wide range of applications requiring reliable and efficient data storage. However, it is important to note that this product is now considered obsolete, so alternative solutions may need to be considered for new designs.