Micron Technology_NAND512R3A2SZAXE
Micron Technology_NAND512R3A2SZAXE
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Micron Technology
NAND512R3A2SZAXE

774-NAND512R3A2SZAXE
IC FLASH 512MBIT PAR 63VFBGA

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
64M x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
63-VFBGA (9x11)
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NAND512R3A2SZAXE Description

NAND512R3A2SZAXE Description

The NAND512R3A2SZAXE is a high-performance flash memory IC designed by Micron Technology Inc., a leading provider of advanced semiconductor solutions. This 512Mbit flash memory device is organized as 64M x 8 and operates with a parallel memory interface, ensuring efficient data transfer and storage capabilities. The NAND512R3A2SZAXE is housed in a surface-mount package, specifically a 63-ball fine-pitch ball grid array (FBGA), which is ideal for compact and high-density applications.

NAND512R3A2SZAXE Features

  • Memory Size and Organization: The NAND512R3A2SZAXE offers a substantial 512Mbit memory size, organized as 64M x 8, providing ample storage for various applications.
  • Access Time: With an access time of 50 nanoseconds, this flash memory ensures rapid data retrieval, enhancing overall system performance.
  • Write Cycle Time: The device supports a write cycle time of 50 nanoseconds, allowing for quick and efficient data writing.
  • Voltage Range: The NAND512R3A2SZAXE operates within a voltage range of 1.7V to 1.95V, ensuring compatibility with a wide range of power supply configurations.
  • Compliance and Safety: This product is REACH unaffected and RoHS3 compliant, adhering to stringent environmental and safety standards.
  • Moisture Sensitivity Level (MSL): The MSL rating of 3 (168 hours) ensures the device's reliability in various environmental conditions.
  • Mounting Type: The surface-mount technology (SMT) of the NAND512R3A2SZAXE makes it suitable for automated assembly processes, reducing production costs and improving scalability.

NAND512R3A2SZAXE Applications

The NAND512R3A2SZAXE is well-suited for a variety of applications where high-density, non-volatile storage is required. Its compact size and efficient performance make it ideal for:

  • Embedded Systems: Ideal for embedded systems where space is limited and high-speed data access is crucial.
  • Consumer Electronics: Suitable for consumer electronics such as smartphones, tablets, and digital cameras, where fast data storage and retrieval are essential.
  • Industrial Applications: Applicable in industrial settings where robust and reliable memory solutions are needed.
  • Automotive Systems: Given its reliability and performance, the NAND512R3A2SZAXE can be used in automotive systems for data storage and retrieval.

Conclusion of NAND512R3A2SZAXE

The NAND512R3A2SZAXE from Micron Technology Inc. is a robust and efficient flash memory IC that offers significant advantages in terms of performance and reliability. Its 512Mbit memory size, organized as 64M x 8, combined with a parallel memory interface, ensures high-speed data transfer and storage. The device's compact 63-ball FBGA package and surface-mount technology make it suitable for a wide range of applications, from embedded systems to consumer electronics and automotive systems. Despite being marked as obsolete, the NAND512R3A2SZAXE remains a reliable choice for applications requiring high-density, non-volatile storage solutions.

FAQ

What voltage specification is listed for NAND512R3A2SZAXE?
The listed voltage-related specification for NAND512R3A2SZAXE is 1.7V ~ 1.95V.
Is NAND512R3A2SZAXE currently in stock?
What is the mounting type of NAND512R3A2SZAXE?
What operating temperature range does NAND512R3A2SZAXE support?
What is NAND512R3A2SZAXE?
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